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Register a new userPlasmonic drag photocurrent in graphene at extreme nonlocality
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It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as plasmonic drag. It is associated with direct momentum transfer from field to conduction electrons, and can be characterized by a non-local non-linear conductivity $sigma^{(2)}({bf q},omega)$. By constructing a classical kinetic model of non-linear conductivity with full account of non-locality, we show that it is resonantly enhanced for wave phase velocity coinciding with electron Fermi velocity. The enhancement is interpreted as phase locking between electrons and the wave. We discuss a possible experiment where non-uniform field is created by a propagating graphene plasmon, and find an upper limit of the current responsivity vs plasmon velocity. This limit is set by a competition between resonantly growing $sigma^{(2)}({bf q},omega)$ and diverging kinetic energy of electrons as the wave velocity approaches Fermi velocity.
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Collective modes in two-dimensional electron fluids show an interesting response to a background carrier flow. Surface plasmons propagating on top of a flowing Fermi liquid acquire a non-reciprocal character manifest in a $pm k$ asymmetry of mode dispersion. The nonreciprocity arises due to Fermi surface polarization by the flow. The flow-induced interactions between quasiparticles make collective modes of the system uniquely sensitive to subtle motional Fermi-liquid effects. The flow-induced Doppler-type frequency shift of plasmon resonances, arising due to electron interactions, can strongly deviate from the classical value. This opens a possibility to directly probe motional Fermi-liquid effects in plasmonic near-field imaging experiments.
Dragging of light by moving dielectrics was predicted by Fresnel and verified by Fizeaus celebrated experiments with flowing water. This momentous discovery is among the experimental cornerstones of Einsteins special relativity and is well understood in the context of relativistic kinematics. In contrast, experiments on dragging photons by an electron flow in solids are riddled with inconsistencies and so far eluded agreement with the theory. Here we report on the electron flow dragging surface plasmon polaritons (SPPs): hybrid quasiparticles of infrared photons and electrons in graphene. The drag is visualized directly through infrared nano-imaging of propagating plasmonic waves in the presence of a high-density current. The polaritons in graphene shorten their wavelength when launched against the drifting carriers. Unlike the Fizeau effect for light, the SPP drag by electrical currents defies the simple kinematics interpretation and is linked to the nonlinear electrodynamics of the Dirac electrons in graphene. The observed plasmonic Fizeau drag enables breaking of time-reversal symmetry and reciprocity at infrared frequencies without resorting to magnetic fields or chiral optical pumping.
We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states.
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO$_2$)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO$_2$ adjacent to the Schottky junction of G/Si. A certain threshold voltage (V$_T$) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO$_2$ by the formation of an inversion layer in Si. Our findings contribute to a basic understanding of graphene / semiconductor hybrid devices which, in turn, can help in designing efficient optoelectronic devices and systems based on such 2D/3D heterojunctions.
Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.
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