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Register a new userDynamic Band-Folding Induced Giant Unconventional Anomalous Hall Effect in Magnetic Weyl Semimetal EuB6
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The modulation of the electronic structure by an external magnetic field, which could further control the electronic transport behaviour of a system, is highly desired. Herein, an unconventional anomalous Hall effect (UAHE) was observed during magnetization process in the magnetic Weyl semimetal EuB6, resulting in an unconventional anomalous Hall-conductivity as high as ~1000 {Omega}-1 cm-1 and a Hall-angle up to ~10%. The system even only shows the UAHE, meaning that the anomalous Hall signal completely comes from the UAHE, with UAHE accounting for 100% and 87.5% of the AHE and the total Hall response, respectively. Theoretical calculations revealed that a largely enhanced Berry curvature was induced by the dynamic folding of the topological bands due to the spin-canting effect under external magnetic fields, which further produced the prominent UAHE even in a low-field magnetization process. These findings elucidate the connection between the non-collinear magnetism and the topological electronic state as well as reveal a novel manner to manipulate the transport behaviour of topological electrons.
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Exploration of the novel relationship between magnetic order and topological semimetals has received enormous interest in a wide range of both fundamental and applied research. Here we predict that soft ferromagnetic (FM) material EuB6 can achieve multiple topological semimetal phases by simply tuning the direction of the magnetic moment. Explicitly, EuB6 is a topological nodal-line semimetal when the moment is aligned along the [001] direction, and it evolves into a Weyl semimetal with three pairs of Weyl nodes by rotating the moment to the [111] direction. Interestingly, we identify a novel semimetal phase featuring the coexistence of a nodal line and Weyl nodes with the moment in the [110] direction. Topological surface states and anomalous Hall conductivity, which is sensitive to the magnetic order, have been computed and are expected to be experimentally observable. Large-Chern-number quantum anomalous Hall effect can be realized in its [111]-oriented quantum-well structure.
Topological materials have recently attracted considerable attention among materials scientists as their properties are predicted to be protected against perturbations such as lattice distortion and chemical substitution. However, any experimental proof of such robustness is still lacking. In this study, we experimentally demonstrate that the topological properties of the ferromagnetic kagome compound Co3Sn2S2 are preserved upon Ni substitution. We systematically vary the Ni content in Co3Sn2S2 single crystals and study their magnetic and anomalous transport properties. For the intermediate Ni substitution, we observe a remarkable increase in the coercive field while still maintaining significant anomalous Hall conductivity. The large anomalous Hall conductivity of these compounds is intrinsic, consistent with first-principle calculations, which proves its topological origin. Our results can guide further studies on the chemical tuning of topological materials for better understanding.
We report a comprehensive investigation of the structural, magnetic, transport and thermodynamic properties of a single crystal PrAlSi, in comparison to its nonmagnetic analogue LaAlSi. PrAlSi exhibits a ferromagnetic transition at $T_C$ = 17.8 K which, however, is followed by two weak phase transitions at lower temperatures. Based on the combined dc and ac magnetic susceptibility measurements, we propose the two reentrant magnetic phases below $T_C$ to be spin glasses or ferromagnetic cluster glasses. When the magnetic glassy states are suppressed by small field, several remarkable features appear. These include a linear, nonsaturating magnetoresistance as a function of field that is reminiscent of a topological or charge-compensated semimetal, and a large anomalous Hall conductivity amounting to $sim$2000 $Omega ^{-1}$cm$^{-1}$. Specific-heat measurements indicate a non-Kramers doublet ground state and a relatively low crystal electric field splitting of the Pr$^{3+}$ multiplets of less than 100 K. Shubnikov-de Hass oscillations are absent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi, with an unusual temperature dependence of the dominating oscillation frequency $F$. It increases from $F$ = 18 T at 25 K to $F$ = 33 T at 2 K, hinting at an emerging Fermi pocket upon cooling into the ordered phase. These results suggest that PrAlSi is a new system where a small Fermi pocket of likely relativistic fermions is strongly coupled to magnetism. Whether hybridization between $f$ and conduction band is also involved remains an intriguing open problem.
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.
Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSM) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHE in a new family of FM WSMs, PrAlGe$_{1-x}$Si$_x$, where $x$ can be tuned continuously. From DFT calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient ($R_S$) but significant changes in the ordinary Hall coefficient ($R_0$) in PrAlGe$_{1-x}$Si$_x$ as a function of $x$, confirming a change of Fermi surface. By comparing the magnitude of $R_0$ and $R_S$, we identify two regimes; $|R_0|<|R_S|$ when $xle0.5$ and $|R_0|>|R_S|$ when $x>0.5$. Through a detailed scaling analysis, we discover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when $xle0.5$. Such universal AHC is absent when $x>0.5$. Thus, we point out the significance of the extrinsic mechanisms in FM WSMs and report the first observation of a transition from intrinsic to extrinsic AHE in PrAlGe$_{1-x}$Si$_x$.
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