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Register a new userNanocrystalline superconducting $gamma$-Mo$_2$N ultra-thin films for single-photon detectors
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We analyze the influence of the surface passivation produced by oxides on the superconducting properties of $gamma$-Mo$_2$N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo$_2$N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time $approx$ 45 ps. This value is promising for its applications in single-photon detectors.
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We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficiencies (SDE) exceeding 20% for SNSPDs which have not been optimized for high detection efficiency.
The non-contact broadband transmission line flip-chip spectroscopy technique is utilized to probe resonances of mm-sized square kinetic planar resonators made from strongly disordered molybdenum carbide films, in the GHz frequency range. The temperature dependence of the resonances was analyzed by the complex conductivity of disordered superconductor, as proposed in Ref. arXiv:1407.2402 , which involves the Dynes superconducting density of states. The obtained Dynes broadening parameters relate reasonably to the ones estimated from scanning tunneling spectroscopy measurements. The eigenmodes of the kinetic planar 2D resonator were visualized by EM model in Sonnet software. The proper understanding of the nature of these resonances can help to eliminate them, or utilize them e.g. as filters.
We report the fabrication of few hundred microns long, hundreds of nanometers wide and 30 nm thick meanders made from YBa2CU3O7. Thin films protected by a 8 nm-thick Ce02 cap layer have been patterned by high energy (a few tens of keV) oxygen ion irradiation through photoresist masks. DC and RF characterizations outline good superconducting properties of nano-meanders that could be used as Superconducting Single Photon Detectors (SSPD). By mean of a resonant method, their inductance, which mainly sets the maximum speed of these devices, has been measured on a wide range of temperature. It compares favorably with expected values calculated from the geometry of the meanders and the known London penetration depth in YBa2CU3O7.
We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect, and a simple model which quantitatively explains the results.
We demonstrate high-efficiency superconducting nanowire single-photon detectors (SNSPDs) fabricated from MoSi thin-films. We measure a maximum system detection efficiency (SDE) of 87 +- 0.5 % at 1542 nm at a temperature of 0.7 K, with a jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.4 +- 0.7 % The SDE curves show saturation of the internal efficiency similar to WSi-based SNSPDs at temperatures as high as 2.3 K. We show that at similar cryogenic temperatures, MoSi SNSPDs achieve efficiencies comparable to WSi-based SNSPDs with nearly a factor of two reduction in jitter.
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