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Register a new userSuperconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film
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We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficiencies (SDE) exceeding 20% for SNSPDs which have not been optimized for high detection efficiency.
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We demonstrate high-efficiency superconducting nanowire single-photon detectors (SNSPDs) fabricated from MoSi thin-films. We measure a maximum system detection efficiency (SDE) of 87 +- 0.5 % at 1542 nm at a temperature of 0.7 K, with a jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.4 +- 0.7 % The SDE curves show saturation of the internal efficiency similar to WSi-based SNSPDs at temperatures as high as 2.3 K. We show that at similar cryogenic temperatures, MoSi SNSPDs achieve efficiencies comparable to WSi-based SNSPDs with nearly a factor of two reduction in jitter.
We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect, and a simple model which quantitatively explains the results.
Using two-temperature model coupled with modified time-dependent Ginzburg-Landau equation we calculate the delay time $tau_d$ in appearance of growing normal domain in the current-biased superconducting strip after absorption of the single photon. We demonstrate that $tau_d$ depends on the place in the strip where photon is absorbed and monotonically decreases with increasing of the current. We argue, that the variation of $tau_d$ (timing jitter), connected either with position-dependent response or Fano fluctuations could be as small as the lowest relaxation time of the superconducting order parameter $sim hbar/k_BT_c$ ($T_c$ is the critical temperature of the superconductor) when the current approaches the depairing current.
We estimate the depairing current of superconducting nanowire single photon detectors (SNSPDs) by studying the dependence of the nanowires kinetic inductance on their bias current. The kinetic inductance is determined by measuring the resonance frequency of resonator style nanowire coplanar waveguides both in transmission and reflection configurations. Bias current dependent shifts in the measured resonant frequency correspond to the change in the kinetic inductance, which can be compared with theoretical predictions. We demonstrate that the fast relaxation model described in the literature accurately matches our experimental data and provides a valuable tool for direct determination of the depairing current. Accurate and direct measurement of the depairing current is critical for nanowire quality analysis, as well as modeling efforts aimed at understanding the detection mechanism in SNSPDs.
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on ultrathin NbN films grown at a temperature compatible with monolithic integration. NbN films ranging from 150nm to 3nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400C. The superconducting properties of NbN films were optimized studying the effects of deposition parameters on film properties. SSPDs were fabricated on high quality NbN films of different thickness (7 to 3nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300nm.
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