No Arabic abstract
We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators.
Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi_2Se_3 in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9times10^16cm^-3, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the u =1 Landau level attained by a field of 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.
The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.
The low energy physics of both graphene and surface states of three-dimensional topological insulators is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a heavy Dirac fermion in a graphene/topological insulator hetero-junction, where the linear term almost vanishes and the corresponding energy dispersion becomes highly non-linear. By combining {it ab initio} calculations and an effective low-energy model, we show explicitly how strong hybridization between Dirac fermions in graphene and the surface states of topological insulators can reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term, interaction effects will be greatly enhanced and can drive heavy Dirac fermion states into the half quantum Hall state with non-zero Hall conductance.
We study the quantum Hall effect of Dirac fermions on the surface of a Wilson-Dirac type topological insulator thin film in the strong topological insulating phase. Although a magnetic field breaks time reversal symmetry of the bulk, the surface states can survive even in a strong field regime. We examine how the Landau levels of the surface states are affected by symmetry breaking perturbations.
Plasmons are the quantized collective oscillations of electrons in metals and doped semiconductors. The plasmons of ordinary, massive electrons are since a long time basic ingredients of research in plasmonics and in optical metamaterials. Plasmons of massless Dirac electrons were instead recently observed in a purely two-dimensional electron system (2DEG)like graphene, and their properties are promising for new tunable plasmonic metamaterials in the terahertz and the mid-infrared frequency range. Dirac quasi-particles are known to exist also in the two-dimensional electron gas which forms at the surface of topological insulators due to a strong spin-orbit interaction. Therefore,one may look for their collective excitations by using infrared spectroscopy. Here we first report evidence of plasmonic excitations in a topological insulator (Bi2Se3), that was engineered in thin micro-ribbon arrays of different width W and period 2W to select suitable values of the plasmon wavevector k. Their lineshape was found to be extremely robust vs. temperature between 6 and 300 K, as one may expect for the excitations of topological carriers. Moreover, by changing W and measuring in the terahertz range the plasmonic frequency vP vs. k we could show, without using any fitting parameter, that the dispersion curve is in quantitative agreement with that predicted for Dirac plasmons.