No Arabic abstract
The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.
In strongly correlated materials, quasiparticle excitations can carry fractional quantum numbers. An intriguing possibility is the formation of fractionalized, charge-neutral fermions, e.g., spinons and fermionic excitons, that result in neutral Fermi surfaces and Landau quantization in an insulator. While previous experiments in quantum spin liquids, topological Kondo insulators, and quantum Hall systems have hinted at charge-neutral Fermi surfaces, evidence for their existence remains far from conclusive. Here we report experimental observation of Landau quantization in a two dimensional (2D) insulator, i.e., monolayer tungsten ditelluride (WTe$_{2}$), a large gap topological insulator. Using a detection scheme that avoids edge contributions, we uncover strikingly large quantum oscillations in the monolayer insulators magnetoresistance, with an onset field as small as ~ 0.5 tesla. Despite the huge resistance, the oscillation profile, which exhibits many periods, mimics the Shubnikov-de Haas oscillations in metals. Remarkably, at ultralow temperatures the observed oscillations evolve into discrete peaks near 1.6 tesla, above which the Landau quantized regime is fully developed. Such a low onset field of quantization is comparable to high-mobility conventional two-dimensional electron gases. Our experiments call for further investigation of the highly unusual ground state of the WTe$_{2}$ monolayer. This includes the influence of device components and the possible existence of mobile fermions and charge-neutral Fermi surfaces inside its insulating gap.
Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi_2Se_3 in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9times10^16cm^-3, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the u =1 Landau level attained by a field of 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.
A topological concern is addressed in view of the extensively and intensively studied topological phases of condensed matter. In this realm, the phases with topological order cannot be characterized by symmetry alone. Moreover, the relevant phase transitions do occur without spontaneous symmetry breaking, beyond the scope of Landaus theory. The first realization of such phases is the discovery of the integer quantum Hall effect (QHE), which was followed soon by a topological interpretation. Later on, a distinct, half-integer QHE was also found from graphene, which has almost spin degeneracy described by $SU(2)$ symmetry. The previous theoretical predictions were realized in this finding. It has been well understood that the anomaly of this half-integer QHE originates from the presence of $2$D massless Dirac fermions around the zero energy with respect to the original Dirac points (DPs). The very characteristic lies in that there exists a topologically robust zero-mode LL that is a constant function of the perpendicular magnetic field. More deeply, this zero-mode LL is protected by the local chiral symmetry (CS), against CS preserving perturbations provided that intervalley scattering between the double DPs is inhibited, where the CS arises from the global sublattice symmetry in spinless graphene. Since massless Dirac particles are broadly present in condensed matter with various symmetries, not to mention Dirac bosonic systems, it is of interest to see how about the situations in other systems with $2$D massless Dirac fermions. We address several notes in a topological viewpoint on the presence of $2$D massless Dirac fermions in $3$D layered systems.In particular, we focus on the zero-mode LL since this LL signifies $2$D massless Dirac fermions.
We construct an action for the composite Dirac fermion consistent with symmetries of electrons projected to the lowest Landau level. First we construct a generalization of the $g=2$ electron that gives a smooth massless limit on any curved background. Using the symmetries of the microscopic electron theory in this massless limit we find a number of constraints on any low-energy effective theory. We find that any low-energy description must couple to a geometry which exhibits nontrivial curvature even on flat space-times. Any composite fermion must have an electric dipole moment proportional and orthogonal to the composite fermions wavevector. We construct the effective action for the composite Dirac fermion and calculate the physical stress tensor and current operators for this theory.
Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.