No Arabic abstract
Correlated states emerge in low-dimensional systems owing to enhanced Coulomb interactions. Elucidating these states requires atomic scale characterization and delicate control capabilities. In this study, spectroscopic imaging-scanning tunneling microscopy was employed to investigate the correlated states residing in the one-dimensional electrons of the monolayer and bilayer MoSe2 mirror twin boundary (MTB). The Coulomb energies, determined by the wire length, drive the MTB into two types of ground states with distinct respective out-of-phase and in-phase charge orders. The two ground states can be reversibly converted through a metastable zero-energy state with in situ voltage pulses, which tunes the electron filling of the MTB via a polaronic process, as substantiated by first-principles calculations. Our modified Hubbard model reveals the ground states as correlated insulators from an on-site U-originated Coulomb interaction, dubbed Hubbard-type Coulomb blockade effect. Our work sets a foundation for understanding correlated physics in complex systems and for tailoring quantum states for nano-electronics applications.
The conductance through a quantum wire of cylindrical cross section and a weak bulge is solved exactly for two electrons within the Landauer-Buettiker formalism. We show that this open quantum dot exhibits spin-dependent Coulomb blockade resonances resulting in two anomalous structure on the rising edge to the first conductance plateau, one near 0.25(2e^2/h), related to a singlet resonance, and one near 0.7(2e^2/h), related to a triplet resonance. These resonances are generic and robust, occurring for other types of quantum wire and surviving to temperatures of a few degrees.
We report low-temperature differential conductance measurements in aluminum arsenide cleaved-edge overgrown quantum wires in the pinch-off regime. At zero source-drain bias we observe Coulomb blockade conductance resonances that become vanishingly small as the temperature is lowered below $250 {rm mK}$. We show that this behavior can be interpreted as a classical-to-stochastic Coulomb blockade cross-over in a series of asymmetric quantum dots, and offer a quantitative analysis of the temperature-dependence of the resonances lineshape. The conductance behavior at large source-drain bias is suggestive of the charge density wave conduction expected for a chain of quantum dots.
We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be well described without invoking Coulomb interactions. At temperatures below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage that corresponds to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are Mesoscopic Coulomb Blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system.
We consider a tunnel junction formed between a fixed electrode and an oscillating one. Accumulation of the charge on the junction capacitor induces a force on the nano-mechanical oscillator. The junction is voltage biased and connected in series with an impedance $Z(omega)$. We discuss how the picture of Coulomb blockade is modified by the presence of the oscillator. Quantum fluctuations of the mechanical oscillator modify the $I$-$V$ characteristics particularly in the strong Coulomb blockade limit. We show that the oscillator can be taken into account by a simple modification of the effective impedance of the circuit. We discuss in some details the case of a single inductance $Z(omega)=iLomega$ and of a constant resistance $Z(omega)=R$. With little modifications the theory applies also to incoherent transport in Josephson junctions in the tunneling limit.
We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.