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Register a new userFabry-Perot interferometry with gate-tunable 3D topological insulator nanowires
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Three-dimensional topological insulator (3D TI) nanowires display various interesting magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov-Bohm oscillations. Here, we focus on the transport properties of a 3D TI nanowire with a gated section that forms an electronic Fabry-Perot (FP) interferometer that can be tuned to act as a surface-state filter or energy barrier. By tuning the carrier density and length of the gated section of the wire, the interference pattern can be controlled and the nanowire can become fully transparent for certain topological surface-state input modes while completely filtering out others. We also consider the interplay of FP interference with an external magnetic field, with which Klein tunneling can be induced, and transverse asymmetry of the gated section, e.g., due to a top-gated structure, which displays an interesting analogy with Rashba nanowires. Due to its rich conductance phenomenology, we propose a 3D TI nanowire with gated section as an ideal setup for a detailed transport-based characterization of 3D TI nanowire surface states near the Dirac point, which could be useful towards realizing 3D TI nanowire-based topological superconductivity and Majorana bound states.
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Resistance oscillations in electronic Fabry-Perot interferometers near fractional quantum Hall (FQH) filling factors 1/3, 2/3, 4/3 and 5/3 in the constrictions are compared to corresponding oscillations near integer quantum Hall (IQH) filling factors in the constrictions, appearing in the same devices and at the same gate voltages. Two-dimensional plots of resistance versus gate voltage and magnetic field indicate that all oscillations are Coulomb dominated. Applying a Coulomb charging model yields an effective tunneling charge e* approx e/3 for all FQH constrictions and e* approx e for IQH constrictions. Surprisingly, we find a common characteristic temperature for FQH oscillations and a different common characteristic temperature for IQH oscillations.
We propose an intrinsic 3D Fabry-Perot type interferometer, coined higher-order interferometer, that utilizes the chiral hinge states of second-order topological insulators and cannot be equivalently mapped to 2D space because of higher-order topology. Quantum interference patterns in the two-terminal conductance of this interferometer are controllable not only by tuning the strength but also, particularly, by rotating the direction of the magnetic field applied perpendicularly to the transport direction. Remarkably, the conductance exhibits a characteristic beating pattern with multiple frequencies with respect to field strength or direction. Our novel interferometer provides feasible and robust magneto-transport signatures to probe the particular hinge states of higher-order topological insulators.
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by 250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.
The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the tight-binding Hamiltonian combining with the nonequilibrium Greens function method. They are strongly dependent on the gate voltage and the longitudinal and perpendicular magnetic fields. By changing the gate voltage or magnetic fields, the values of $S_c$ and $ZT$ can be easily controlled. At the zero magnetic fields and zero gate voltage, or at the large perpendicular magnetic field and nonzero gate voltage, $ZT$ has the large value. Owing to the electron-hole symmetry, $S_c$ is an odd function of the Fermi energy while $ZT$ is an even function regardless of the magnetic fields. $S_c$ and $ZT$ show peaks when the quantized transmission coefficient jumps from one plateau to another. The highest peak appears while the Fermi energy is near the Dirac point. At the zero perpendicular magnetic field and zero gate voltage, the height of $n$th peak of $S_C$ is $frac{k_B}{e}texttt{ln}2/(|n|+1/2)$ and $frac{k_B}{e}texttt{ln}2/|n|$ for the longitudinal magnetic flux $phi_{parallel} = 0 $ and $pi$, respectively. Finally, we also study the effect of disorder and find that $S_c$ and $ZT$ are robust against disorder. In particular, the large value of $ZT$ can survive even if at the strong disorder. These characteristics (that $ZT$ has the large value, is easily regulated, and is robust against the disorder) are very beneficial for the application of the thermoelectricity.
In this chapter we review our work on the theory of quantum transport in topological insulator nanowires. We discuss both normal state properties and superconducting proximity effects, including the effects of magnetic fields and disorder. Throughout we assume that the bulk is insulating and inert, and work with a surface-only theory. The essential transport properties are understood in terms of three special modes: in the normal state, half a flux quantum along the length of the wire induces a perfectly transmitted mode protected by an effective time reversal symmetry; a transverse magnetic field induces chiral modes at the sides of the wire, with different chiralities residing on different sides protecting them from backscattering; and, finally, Majorana zero modes are obtained at the ends of a wire in a proximity to a superconductor, when combined with a flux along the wire. Some parts of our discussion have a small overlap with the discussion in the review [Bardarson and Moore, Rep. Prog. Phys., 76, 056501, (2013)]. We do not aim to give a complete review of the published literature, instead the focus is mainly on our own and directly related work.
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