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Register a new userGate voltage controlled thermoelectric figure of merit in three-dimensional topological insulator nanowires
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The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the tight-binding Hamiltonian combining with the nonequilibrium Greens function method. They are strongly dependent on the gate voltage and the longitudinal and perpendicular magnetic fields. By changing the gate voltage or magnetic fields, the values of $S_c$ and $ZT$ can be easily controlled. At the zero magnetic fields and zero gate voltage, or at the large perpendicular magnetic field and nonzero gate voltage, $ZT$ has the large value. Owing to the electron-hole symmetry, $S_c$ is an odd function of the Fermi energy while $ZT$ is an even function regardless of the magnetic fields. $S_c$ and $ZT$ show peaks when the quantized transmission coefficient jumps from one plateau to another. The highest peak appears while the Fermi energy is near the Dirac point. At the zero perpendicular magnetic field and zero gate voltage, the height of $n$th peak of $S_C$ is $frac{k_B}{e}texttt{ln}2/(|n|+1/2)$ and $frac{k_B}{e}texttt{ln}2/|n|$ for the longitudinal magnetic flux $phi_{parallel} = 0 $ and $pi$, respectively. Finally, we also study the effect of disorder and find that $S_c$ and $ZT$ are robust against disorder. In particular, the large value of $ZT$ can survive even if at the strong disorder. These characteristics (that $ZT$ has the large value, is easily regulated, and is robust against the disorder) are very beneficial for the application of the thermoelectricity.
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Spin-momentum locking, a key property of the surface states of three-dimensional topological insulators (3DTIs), provides a new avenue for spintronics applications. One consequence of spin-momentum locking is the induction of surface spin accumulations due to applied electric fields. In this work, we investigate the extraction of such electrically-induced spins from their host TI material into adjoining conventional, hence topologically trivial, materials that are commonly used in electronics devices. We focus on effective Hamiltonians for bismuth-based 3DTI materials in the ${rm Bi}_2{rm Se}_3$ family, and numerically explore the geometries for extracting current-induced spins from a TI surface. In particular, we consider a device geometry in which a side pocket is attached to various faces of a 3DTI quantum wire and show that it is possible to create current-induced spin accumulations in these topologically trivial side pockets. We further study how such spin extraction depends on geometry and material parameters, and find that electron-hole degrees of freedom can be utilized to control the polarization of the extracted spins by an applied gate voltage.
We consider the thermoelectric response of chaotic or disordered quantum dots in the limit of phase-coherent transport, statistically described by random matrix theory. We calculate the full distribution of the thermoelectric coefficients (Seebeck $S$ and Peltier $Pi$), and the thermoelectric figure of merit $ZT$, for large open dots at arbitrary temperature and external magnetic field, when the number of modes in the left and right leads ($N_{rm L}$ and $N_{rm R}$) are large. Our results show that the thermoelectric coefficients and $ZT$ are maximal when the temperature is half the Thouless energy, and the magnetic field is negligible. They remain small, even at their maximum, but they exhibit a type of universality at all temperatures, in which they do not depend on the asymmetry between the left and right leads $(N_{rm L}-N_{rm R})$, even though they depend on $(N_{rm L}+N_{rm R})$.
Three-dimensional topological insulator (3D TI) nanowires display various interesting magnetotransport properties that can be attributed to their spin-momentum-locked surface states such as quasiballistic transport and Aharonov-Bohm oscillations. Here, we focus on the transport properties of a 3D TI nanowire with a gated section that forms an electronic Fabry-Perot (FP) interferometer that can be tuned to act as a surface-state filter or energy barrier. By tuning the carrier density and length of the gated section of the wire, the interference pattern can be controlled and the nanowire can become fully transparent for certain topological surface-state input modes while completely filtering out others. We also consider the interplay of FP interference with an external magnetic field, with which Klein tunneling can be induced, and transverse asymmetry of the gated section, e.g., due to a top-gated structure, which displays an interesting analogy with Rashba nanowires. Due to its rich conductance phenomenology, we propose a 3D TI nanowire with gated section as an ideal setup for a detailed transport-based characterization of 3D TI nanowire surface states near the Dirac point, which could be useful towards realizing 3D TI nanowire-based topological superconductivity and Majorana bound states.
Thermoelectric (TE) conversion in conducting materials is of eminent importance for providing renewable energy and solid-state cooling. Although traditionally, the Seebeck effect plays a key role for the TE figure of merit zST, it encounters fundamental constraints hindering its conversion efficiency. Most notably, there are the charge compensation of electrons and holes that diminishes this effect, and the intertwinement of the corresponding electrical and thermal conductivities through the Wiedemann-Franz (WF) law which makes their independent optimization in zST impossible. Here, we demonstrate that in the Dirac semimetal Cd3As2 the Nernst effect, i.e., the transverse counterpart of the Seebeck effect, can generate a large TE figure of merit zNT. At room temperature, zNT = 0.5 in a small field of 2 T; it significantly surmounts its longitudinal counterpart zST for any field and further increases upon warming. A large Nernst effect is generically expected in topological semimetals, benefiting from both the bipolar transport of compensated electrons and holes and their high mobilities. In this case, heat and charge transport are orthogonal, i.e., not intertwined by the WF law anymore. More importantly, further optimization of zNT by tuning the Fermi level to the Dirac node can be anticipated due to not only the enhanced bipolar transport, but also the anomalous Nernst effect arising from a pronounced Berry curvature. A combination of the former topologically trivial and the latter nontrivial advantages promises to open a new avenue towards high-efficient transverse thermoelectricity.
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