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Register a new userCrystal Growth of a New 8H Perovskite Sr8Os6.3O24 Exhibiting High TC Ferromagnetism
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Single crystals of a new twinned hexagonal perovskite compound Sr8Os6.3O24 have been synthesized, and structural and magnetic properties have been determined. The compound crystallizes in a hexagonal cell with lattice parameters a = 9.6988(3) {AA} and c = 18.1657(5) {AA}. The structure is an eight-layered hexagonal B-site deficient perovskite with the layer sequence (ccch)2 and represents the first example of a hexagonal structure among 5d oxides adopting a twin option. The sample shows spontaneous ferromagnetic magnetization below 430 K with a small saturation moment of 0.11 {mu}B/Os ion. This is the highest Curie temperature (TC) reported for any bulk perovskite containing only 5d ions at the B site.
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Single crystals of PrNiO3 were grown under an oxygen pressure of 295 bar using a unique high-pressure optical-image floating zone furnace. The crystals, with volume in excess of 1 mm3, were characterized structurally using single crystal and powder X-ray diffraction. Resistivity, specific heat, and magnetic susceptibility were measured, all of which evidenced an abrupt, first order metal-insulator transition (MIT) at ~130 K, in agreement with previous literature reports on polycrystalline specimens. Temperature-dependent single crystal diffraction was performed to investigate changes through the MIT. Our study demonstrates the opportunity space for high fugacity, reactive environments for single crystal growth specifically of perovskite nickelates but more generally to correlated electron oxides.
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferromagnetic and paramagnetic contributions at low temperatures, while the typical ferromagnetic magnetization process is mainly observed at high temperatures because of the decrease of the paramagnetic contributions. The observed transport characteristics show a close relation between the magnetism and the impurity conduction. The double exchange mechanism of the Mn-impurity band is one of the possible models for the high-TC ferromagnetism in GaN:Mn.
In order to study the metallic ferromagnetism induced by electron doping in the narrow-gab semiconductor FeSb$_2$, single crystals of FeSb$_2$, Fe$_{1-x}$Co$_x$Sb$_2$ ($0 le x le 0.5$) and FeSb$_{2-y}$Te$_y$ ($0 le y le 0.4$), were grown by a simplified self-flux method. From powder x-ray diffraction (XRD) patterns, wavelength-dispersive x-ray spectroscopy (WDX) and x-ray Laue diffraction, pure and doped high-quality single crystals, within the selected solubility range, show only the orthorhombic $Pnnm$ structure of FeSb$_2$ with a monotonic change in lattice parameters with increasing the doping level. In consistence with the model of nearly ferromagnetic small-gap semiconductor, the energy gap of FeSb$_2$ Pauli paramagnet gradually collapses by electron doping before it closes at about $x$ or $y$ = 0.15 and subsequent itinerant electron anisotropic ferromagnetic states are observed with higher doping levels. A magnetic phase diagram is established and discussed in view of proposed theoretical scenarios.
Here we report successful single crystal growth of new possible magnetic topological insulator (MTI) FeBi2Te4 by self-flux method via vacuum encapsulation process. The detailed Rietveld analysis of Powder XRD data shows the as grown MTI crystal to be mainly dominated by FeBi2Te4 phase along with minority phases of Bi2Te3 and FeTe. Scanning electron microscope (SEM) image shows the morphology of as grown MTI single crystal to be of layered type laminar structure. Raman spectroscopy of the crystal exhibited three distinct phonon modes at 65, 110, and 132 cm-1 along with two split secondary modes at 90, and 144cm-1. The secondary split modes are result of FeTe intercalation in Bi2Te3 unit cell. Magneto-resistance measurement has been performed at different temperatures i.e. 200K, 20K and 2K in applied magnetic fields up to 12 Tesla, which showed very low MR in comparison to pure Bi2Te3 crystal. Temperature dependence of DC magnetization measurements show the FeBi2Te4 crystal to be mainly of ferromagnetic (FM) or ferri-magnetic nature above 295 K, albeit a secondary weak magnetic transition is seen at 54-46K as well. Detailed isothermal magnetization (MH) results showed that FM saturation moment at 295K is 0.00213emu/g, which is nearly invariant till 400 K. Summary, we had grown an MTI FeBi2Te4 single crystal, which may be a possible entrant for Quantum Anomalous Hall (QAH) effect at room temperature or above.
Although the precise mechanism of high-Tc superconductivity in the layered cuprates remains unknown, it is generally thought that strong 2D Heisenberg antiferromagnetism combined with disruptive hole doping is an essential aspect of the phenomenon. Intensive studies of other layered 3d transition metal systems have greatly extended our understanding of strongly correlated electron states, but to date have failed to show strong 2D antiferromagnetism or high-Tc superconductivity. For this reason the largely unexplored 4d^9 Ag^II fluorides, which are structurally and perhaps magnetically similar to the 3d^9 Cu^II cuprates, merit close study. Here we present a comprehensive study of magnetism in the layered Ag^II fluoride Cs_2AgF_4, using magnetic susceptometry, neutron diffraction and inelastic neutron scattering techniques. We find that this material is well described as a 2D Heisenberg ferromagnet, in sharp contrast to the high-Tc cuprates. The exchange constant J is the largest known for any material of this type. We suggest that orbital ordering may be the origin of the ferromagnetism we observe in this material.
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