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Register a new userA General Method to Design Acoustic Higher-Order Topological Insulators
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Acoustic systems that are without limitations imposed by the Fermi level have been demonstrated as significant platform for the exploration of fruitful topological phases. By surrounding the nontrivial domain with trivial environment, the domain-wall topological states have been theoretically and experimentally demonstrated. In this work, based on the topological crystalline insulator with a kagome lattice, we rigorously derive the corresponding Hamiltonian from the traditional acoustics perspective, and exactly reveal the correspondences of the hopping and onsite terms within acoustic systems. Crucially, these results directly indicate that instead of applying the trivial domain, the soft boundary condition precisely corresponds to the theoretical models which always require generalized chiral symmetry. These results provide a general platform to construct desired acoustic topological devices hosting desired topological phenomena for versatile applications.
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Higher-order topological insulators exhibit multidimensional topological physics and unique application values due to their ability of integrating stable boundary states at multiple dimensions in a single chip. However, for signal-processing applications in high-frequency mechanical systems, the current realizations of higher-order topological mechanical materials are still limited to large-scale systems for kilohertz or lower frequencies. Here, we report the experimental observation of a on-chip micromechanical metamaterial as higher-order topological insulator for high-frequency mechanical waves. The higher-order topological phononic band gap is induced by the band inversion at the Brillouin zone corner which is achieved by configuring the orientations of the elliptic pillars etched on the silicon chip. With consistent experiments and theory, we demonstrate the coexistence of topological edge and corner states in the megahertz frequency regime as induced by the higher-order band topology. The experimental realization of on-chip micromechanical metamaterials with higher-order topology opens a regime for applications based on megahertz mechanical waves in an integrated platform where the edge and corner states act as stable waveguides and resonators, respectively.
Three-dimensional topological (crystalline) insulators are materials with an insulating bulk, but conducting surface states which are topologically protected by time-reversal (or spatial) symmetries. Here, we extend the notion of three-dimensional topological insulators to systems that host no gapless surface states, but exhibit topologically protected gapless hinge states. Their topological character is protected by spatio-temporal symmetries, of which we present two cases: (1) Chiral higher-order topological insulators protected by the combination of time-reversal and a four-fold rotation symmetry. Their hinge states are chiral modes and the bulk topology is $mathbb{Z}_2$-classified. (2) Helical higher-order topological insulators protected by time-reversal and mirror symmetries. Their hinge states come in Kramers pairs and the bulk topology is $mathbb{Z}$-classified. We provide the topological invariants for both cases. Furthermore we show that SnTe as well as surface-modified Bi$_2$TeI, BiSe, and BiTe are helical higher-order topological insulators and propose a realistic experimental setup to detect the hinge states.
The discovery of topologically protected boundary states in topological insulators opens a new avenue toward exploring novel transport phenomena. The one-way feature of boundary states against disorders and impurities prospects great potential in applications of electronic and classical wave devices. Particularly, for the 3D higher-order topological insulators, it can host hinge states, which allow the energy to transport along the hinge channels. However, the hinge states haveonly been observed along a single hinge, and a natural question arises: whether the hinge states can exist simultaneously on all the three independent directions of one sample? Here we theoretically predict and experimentally observe the hinge states on three different directions of a higher-order topological phononic crystal, and demonstrate their robust one-way transport from hinge to hinge. Therefore, 3D topological hinge transport is successfully achieved. The novel sound transport may serve as the basis for acoustic devices of unconventional functions.
In this work, we study the disorder effects on the bulk-boundary correspondence of two-dimensional higher-order topological insulators (HOTIs). We concentrate on two cases: (i) bulk-corner correspondence, (ii) edge-corner correspondence. For the bulk-corner correspondence case, we demonstrate the existence of the mobility gaps and clarify the related topological invariant that characterizes the mobility gap. Furthermore, we find that, while the system preserves the bulk-corner correspondence in the presence of disorder, the corner states are protected by the mobility gap instead of the bulk gap. For the edge-corner correspondence case, we show that the bulk mobility gap and edge band gaps of HOTIs are no longer closed simultaneously. Therefore, a rich phase diagram is obtained, including various disorder-induced phase transition processes. Notably, a disorder-induced transition from the non-trivial to trivial phase is realized, distinguishing the HOTIs from the other topological states. Our results deepen the understanding of bulk-boundary correspondence and enrich the topological phase transitions of disordered HOTIs.
Photonic topological states have revolutionized our understanding on the propagation and scattering of light. Recent discovery of higher-order photonic topological insulators opens an emergent horizon for zero-dimensional topological corner states. However, the previous realizations of higher-order photonic topological insulators suffer from either a limited operational frequency range due to the lumped components involved or a bulky structure with a large footprint, which are unfavorable for future integrated photonics. To overcome these limitations, we hereby experimentally demonstrate a planar surface-wave photonic crystal realization of two-dimensional higher-order topological insulators. The surface-wave photonic crystals exhibit a very large bulk bandgap (a bandwidth of 28%) due to multiple Bragg scatterings and host one-dimensional gapped edge states described by massive Dirac equations. The topology of those higher-dimensional photonic bands leads to the emergence of zero-dimensional corner states, which provide a route toward robust cavity modes for scalable, integrated photonic chips and an interface for the control of light-matter interaction.
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