No Arabic abstract
Higher-order topological insulators exhibit multidimensional topological physics and unique application values due to their ability of integrating stable boundary states at multiple dimensions in a single chip. However, for signal-processing applications in high-frequency mechanical systems, the current realizations of higher-order topological mechanical materials are still limited to large-scale systems for kilohertz or lower frequencies. Here, we report the experimental observation of a on-chip micromechanical metamaterial as higher-order topological insulator for high-frequency mechanical waves. The higher-order topological phononic band gap is induced by the band inversion at the Brillouin zone corner which is achieved by configuring the orientations of the elliptic pillars etched on the silicon chip. With consistent experiments and theory, we demonstrate the coexistence of topological edge and corner states in the megahertz frequency regime as induced by the higher-order band topology. The experimental realization of on-chip micromechanical metamaterials with higher-order topology opens a regime for applications based on megahertz mechanical waves in an integrated platform where the edge and corner states act as stable waveguides and resonators, respectively.
Photonic topological states have revolutionized our understanding on the propagation and scattering of light. Recent discovery of higher-order photonic topological insulators opens an emergent horizon for zero-dimensional topological corner states. However, the previous realizations of higher-order photonic topological insulators suffer from either a limited operational frequency range due to the lumped components involved or a bulky structure with a large footprint, which are unfavorable for future integrated photonics. To overcome these limitations, we hereby experimentally demonstrate a planar surface-wave photonic crystal realization of two-dimensional higher-order topological insulators. The surface-wave photonic crystals exhibit a very large bulk bandgap (a bandwidth of 28%) due to multiple Bragg scatterings and host one-dimensional gapped edge states described by massive Dirac equations. The topology of those higher-dimensional photonic bands leads to the emergence of zero-dimensional corner states, which provide a route toward robust cavity modes for scalable, integrated photonic chips and an interface for the control of light-matter interaction.
Acoustic systems that are without limitations imposed by the Fermi level have been demonstrated as significant platform for the exploration of fruitful topological phases. By surrounding the nontrivial domain with trivial environment, the domain-wall topological states have been theoretically and experimentally demonstrated. In this work, based on the topological crystalline insulator with a kagome lattice, we rigorously derive the corresponding Hamiltonian from the traditional acoustics perspective, and exactly reveal the correspondences of the hopping and onsite terms within acoustic systems. Crucially, these results directly indicate that instead of applying the trivial domain, the soft boundary condition precisely corresponds to the theoretical models which always require generalized chiral symmetry. These results provide a general platform to construct desired acoustic topological devices hosting desired topological phenomena for versatile applications.
We discuss how strongly interacting higher-order symmetry protected topological (HOSPT) phases can be characterized from the entanglement perspective: First, we introduce a topological many-body invariant which reveals the non-commutative algebra between flux operator and $C_n$ rotations. We argue that this invariant denotes the angular momentum carried by the instanton which is closely related to the discrete Wen-Zee response and fractional corner charge. Second, we define a new entanglement property, dubbed `higher-order entanglement, to scrutinize and differentiate various higher-order topological phases from a hierarchical sequence of the entanglement structure. We support our claims by numerically studying a super-lattice Bose-Hubbard model that exhibits different HOSPT phases.
Depending on the geometry of their Fermi surfaces, Weyl semimetals and their analogues in classical systems have been classified into two types. In type I Weyl semimetals (WSMs), the cone-like spectrum at the Weyl point (WP) is not tilted, leading to a point-like closed Fermi surface. In type II WSMs, on the contrary, the energy spectrum around the WP is strongly tilted such that the Fermi surface transforms from a point into an open surface. Here, we demonstrate, both theoretically and experimentally, a new type of (classical) Weyl semimetal whose Fermi surface is neither a point nor a surface, but a flat line. The distinctive Fermi surfaces of such semimetals, dubbed as type III or zero-index WSMs, gives rise to unique physical properties: one of the edge modes of the semimetal exhibits a zero index of refraction along a specific direction, in stark contrast to types I and II WSMs for which the index of refraction is always non-zero. We show that the zero-index response of such topological phases enables exciting applications such as extraordinary wave transmission (EOT).
Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexagonal boron nitride to an on-chip aluminium nitride waveguide. We achieved 1.2% light coupling efficiency of the device and realise transmission of single photons through the waveguide. Our results serve as a foundation for the integration of layered materials with on-chip components and for the realisation of integrated quantum photonic circuitry.