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Register a new userTSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing
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In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
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We demonstrate confinement of individual atomic ions in a radio-frequency Paul trap with a novel geometry where the electrodes are located in a single plane and the ions confined above this plane. This device is realized with a relatively simple fabrication procedure and has important implications for quantum state manipulation and quantum information processing using large numbers of ions. We confine laser-cooled Mg-24 ions approximately 40 micrometer above planar gold electrodes. We measure the ions motional frequencies and compare them to simulations. From measurements of the escape time of ions from the trap, we also determine a heating rate of approximately five motional quanta per millisecond for a trap frequency of 5.3 MHz.
We investigate a surface-mounted electrode geometry for miniature linear radio frequency Paul ion traps. The electrodes reside in a single plane on a substrate, and the pseudopotential minimum of the trap is located above the substrate at a distance on order of the electrodes lateral extent or separation. This architecture provides the possibility to apply standard microfabrication principles to the construction of multiplexed ion traps, which may be of particular importance in light of recent proposals for large-scale quantum computation based on individual trapped ions.
Large-scale quantum information processors must be able to transport and maintain quantum information, and repeatedly perform logical operations. Here we demonstrate a combination of all the fundamental elements required to perform scalable quantum computing using qubits stored in the internal states of trapped atomic ions. We quantify the repeatability of a multi-qubit operation, observing no loss of performance despite qubit transport over macroscopic distances. Key to these results is the use of different pairs of beryllium ion hyperfine states for robust qubit storage, readout and gates, and simultaneous trapping of magnesium re-cooling ions along with the qubit ions.
We describe an ex-situ surface-cleaning procedure that is shown to reduce motional heating from ion-trap electrodes. This precleaning treatment, to be implemented immediately before the final assembly and vacuum processing of ion traps, removes surface contaminants remaining after the electrode-fabrication process. We incorporate a multi-angle ion-bombardment treatment intended to clean the electrode surfaces and interelectrode gaps of microfabricated traps. This procedure helps to minimize redeposition in the gaps between electrodes that can cause electrical shorts. We report heating rates in a stylus-type ion trap prepared in this way that are lower by one order of magnitude compared to a similar untreated stylus-type trap using the same experimental setup.
A scalable, multiplexed ion trap for quantum information processing is fabricated and tested. The trap design and fabrication process are optimized for scalability to small trap size and large numbers of interconnected traps, and for integration of control electronics and optics. Multiple traps with similar designs are tested with Cd+, Mg+, and Sr+ ions at room temperature and with Sr+ at 6 K, with respective ion lifetimes of 90 s, 300 +/- 30 s, 56 +/- 6 s, and 4.5 +/- 1.1 hours. The motional heating rate for Mg+ at room temperature and a trap frequency of 1.6 MHz is measured to be 7 +/- 3 quanta per millisecond. For Sr+ at 6 K and 540 kHz the heating rate is measured to be 220 +/- 30 quanta per second.
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