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Register a new userTopological valley currents via ballistic edge modes in graphene superlattices near the primary Dirac point
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Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 ${mu}$m. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Buttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics
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Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphenes two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several microns away from the nominal current path. Locally, topological currents are comparable in strength to the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom.
In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena has never been explored. Here, we report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant non-local resistances with a large valley Hall angle without a magnetic field. In the low-temperature regime, a crossover occurs toward a new state of matter, referred to as a quantum valley Hall state (qVHS), which is an analog of the quantum Hall state without a magnetic field. Furthermore, a non-local resistance plateau, implying rigidity of the qVHS, emerges as a function of magnetic field, and the collapse of this plateau is observed, which is considered as a manifestation of valley/pseudospin magnetism.
The dynamical approach is applied to ballistic transport in mesoscopic graphene samples of length L and contact potential U. At times shorter than both relevant time scales, the flight time and hslash/U, the major effect of the electric field is to create electron - hole pairs, i.e. causing interband transitions. In linear response this leads (for width W>>L) to conductivity pi/2 e^{2}/h. On the other hand, at times lager than the two scales the mechanism and value are different. It is shown that the conductivity approaches its intraband value, equal to the one obtained within the Landauer-Butticker approach resulting from evanescent waves. It is equal to 4/pi e^{2}/h for W>>L. The interband transitions, within linear response, are unimportant in this limit. Between these extremes there is a crossover behaviour dependent on the ratio between the two time scales. At strong electric fields (beyond linear reponse) the interband process dominates. The electron-hole mechanism is universal, namely does not depend on geometry (aspect ratio, topology of boundary conditions, properties of leads), while the evanescent modes mechanism depends on all of them. On basis of the results we determine, that while in absorption measurements and in DC transport in suspended graphene the first conductivity value was measured, the latter one would appear in experiments on small ballistic graphene flakes on substrate.
The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy/spectroscopy on a mesoscopic graphene device, we directly observe the puddles growth, both in spatial extent and in amplitude, as the Dirac point is approached. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.
We present an experimental study of nonlocal electrical signals near the Dirac point in graphene. The in-plane magnetic field dependence of the nonlocal signal confirms the role of spin in this effect, as expected from recent predictions of Zeeman spin Hall effect in graphene, but our experiments show that thermo-magneto-electric effects also contribute to nonlocality, and the effect is sometimes stronger than that due to spin. Thermal effects are seen to be very sensitive to sample details that do not influence other transport parameters.
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