No Arabic abstract
The dynamical approach is applied to ballistic transport in mesoscopic graphene samples of length L and contact potential U. At times shorter than both relevant time scales, the flight time and hslash/U, the major effect of the electric field is to create electron - hole pairs, i.e. causing interband transitions. In linear response this leads (for width W>>L) to conductivity pi/2 e^{2}/h. On the other hand, at times lager than the two scales the mechanism and value are different. It is shown that the conductivity approaches its intraband value, equal to the one obtained within the Landauer-Butticker approach resulting from evanescent waves. It is equal to 4/pi e^{2}/h for W>>L. The interband transitions, within linear response, are unimportant in this limit. Between these extremes there is a crossover behaviour dependent on the ratio between the two time scales. At strong electric fields (beyond linear reponse) the interband process dominates. The electron-hole mechanism is universal, namely does not depend on geometry (aspect ratio, topology of boundary conditions, properties of leads), while the evanescent modes mechanism depends on all of them. On basis of the results we determine, that while in absorption measurements and in DC transport in suspended graphene the first conductivity value was measured, the latter one would appear in experiments on small ballistic graphene flakes on substrate.
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 ${mu}$m. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Buttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics
Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents simple use of electrostatic gates to define electron-optical devices in graphene. Here, we present a method of creating highly-collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18 degrees or narrower, and transmission matching semiclassical predictions.
We numerically calculate the conductivity $sigma$ of an undoped graphene sheet (size $L$) in the limit of vanishingly small lattice constant. We demonstrate one-parameter scaling for random impurity scattering and determine the scaling function $beta(sigma)=dlnsigma/dln L$. Contrary to a recent prediction, the scaling flow has no fixed point ($beta>0$) for conductivities up to and beyond the symplectic metal-insulator transition. Instead, the data supports an alternative scaling flow for which the conductivity at the Dirac point increases logarithmically with sample size in the absence of intervalley scattering -- without reaching a scale-invariant limit.
Despite extensive search for about a decade, specular Andreev reflection is only recently realized in bilayer graphene-superconductor interface. However, the evolution from the typical retro type Andreev reflection to the unique specular Andreev reflection in single layer graphene has not yet been observed. We investigate this transition by measuring the differential conductance at the van der Walls interface of single layer graphene and NbSe2 superconductor. We find that the normalized conductance becomes suppressed as we pass through the Dirac cone via tuning the Fermi level and bias energy, which manifests the transition from retro to non-retro type Andreev reflection. The suppression indicates the blockage of Andreev reflection beyond a critical angle of the incident electron with respect to the normal between the single layer graphene and the superconductor junction. The results are compared with a theoretical model of the corresponding setup.
We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future.