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Register a new userCharacterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
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Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100deg C, 250deg C and 350deg C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below $10^{-5}$ for a resonator energy of $10^5$ photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
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We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
We perform an experimental and numerical study of dielectric loss in superconducting microwave resonators at low temperature. Dielectric loss, due to two-level systems, is a limiting factor in several applications, e.g. superconducting qubits, Josephson parametric amplifiers, microwave kinetic-inductance detectors, and superconducting single-photon detectors. Our devices are made of disordered NbN, which, due to magnetic-field penetration, necessitates 3D finite-element simulation of the Maxwell--London equations at microwave frequencies to accurately model the current density and electric field distribution. From the field distribution, we compute the geometric filling factors of the lossy regions in our resonator structures and fit the experimental data to determine the intrinsic loss tangents of its interfaces and dielectrics. We emphasise that the loss caused by a spin-on-glass resist such as hydrogen silsesquioxane (HSQ), used for ultrahigh lithographic resolution relevant to the fabrication of nanowires, and find that, when used, HSQ is the dominant source of loss, with a loss tangent of $delta^i_{HSQ} = 8 times 10^{-3}$.
The loss and noise mechanisms of superconducting resonators are useful tools for understanding decoherence in superconducting circuits. While the loss mechanisms have been heavily studied, noise in superconducting resonators has only recently been investigated. In particular, there is an absence of literature on noise in the single photon limit. Here, we measure the loss and noise of an aluminium on silicon quarter-wavelength ($lambda/4$) resonator in the single photon regime.
An integrated filterbank (IFB) in combination with microwave kinetic inductance detectors (MKIDs), both based on superconducting resonators, could be used to make broadband submillimeter imaging spectrographs that are compact and flexible. In order to investigate the possibility of adopting an IFB configuration for DESHIMA (Delft SRON High-redshift Mapper), we study the basic properties of a coplanar-waveguide-based IFB using electromagnetic simulation. We show that a coupling efficiency greater than 1/2 can be achieved if transmission losses are negligible. We arrive at a practical design for a 9 pixel x 920 color 3 dimensional imaging device that fits on a 4 inch wafer, which instantaneously covers multiple submillimeter telluric windows with a dispersion of f/df = 1000.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8times10^5$, while thicker SiN buffer layers led to reduced $Q_i$s at low power.
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