Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userPhononic loss in superconducting resonators on piezoelectric substrates
82
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
rate research
Read More
The loss and noise mechanisms of superconducting resonators are useful tools for understanding decoherence in superconducting circuits. While the loss mechanisms have been heavily studied, noise in superconducting resonators has only recently been investigated. In particular, there is an absence of literature on noise in the single photon limit. Here, we measure the loss and noise of an aluminium on silicon quarter-wavelength ($lambda/4$) resonator in the single photon regime.
We present a system which allows to tune the coupling between a superconducting resonator and a transmission line. This storage resonator is addressed through a second, coupling resonator, which is frequency-tunable and controlled by a magnetic flux applied to a superconducting quantum interference device (SQUID). We experimentally demonstrate that the lifetime of the storage resonator can be tuned by more than three orders of magnitude. A field can be stored for 18 {mu}s when the coupling resonator is tuned off resonance and it can be released in 14 ns when the coupling resonator is tuned on resonance. The device allows capture, storage, and on-demand release of microwaves at a tunable rate.
We present an experimental demonstration as well as a theoretical model of an integrated circuit designed for the manipulation of a microwave field down to the single-photon level. The device is made of a superconducting resonator coupled to a transmission line via a second frequency-tunable resonator. The tunable resonator can be used as a tunable coupler between the fixed resonator and the transmission line. Moreover, the manipulation of the microwave field between the two resonators is possible. In particular, we demonstrate the swapping of the field from one resonator to the other by pulsing the frequency detuning between the two resonators. The behavior of the system, which determines how the device can be operated, is analyzed as a function of one key parameter of the system, the damping ratio of the coupled resonators. We show a good agreement between experiments and simulations, realized by solving a set of coupled differential equations.
We find that stray infrared light from the 4 K stage in a cryostat can cause significant loss in superconducting resonators and qubits. For devices shielded in only a metal box, we measured resonators with quality factors Q = 10^5 and qubits with energy relaxation times T_1=120 ns, consistent with a stray light-induced quasiparticle density of 170-230 mu m^{-3}. By adding a second black shield at the sample temperature, we found about an order of magnitude improvement in performance and no sensitivity to the 4 K radiation. We also tested various shielding methods, implying a lower limit of Q = 10^8 due to stray light in the light-tight configuration.
We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
