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Register a new userIn-Situ Studies of Stress Environment in Amorphous Solids Using Negatively Charged Nitrogen Vacancy Centers in Nanodiamond
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Amorphous solids, which show characteristic differences from crystals, are common in daily usage. Glasses, gels, and polymers are familiar examples, and polymers are particularly important in terms of their role in construction and crafting. Previous studies have mainly focused on the bulk properties of polymeric products, and the local properties are less discussed. Here, we designed a distinctive protocol using the negatively charged nitrogen vacancy center in nanodiamond to study properties inside polymeric products in situ. Choosing the curing of poly dimethylsiloxane and the polymerization of cyanoacrylate as subjects of investigation, we measured the time dependence of local pressure and strain in the materials during the chemical processes. From the measurements, we were able to probe the local shear stress inside the two polymeric substances in situ. By regarding the surprisingly large shear stress as the internal tension, we attempted to provide a microscopic explanation for the ultimate tensile strength of a bulk solid. Our current methodology is applicable to any kind of transparent amorphous solids with the stress in the order of MPa and to the study of in situ properties in nanoscale. With better apparatus, we expect the limit can be pushed to sub-MPa scale.
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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
We investigate the influence of plasma treatments, especially a 0V-bias, potentially low damage O$_2$ plasma as well as a biased Ar/SF$_6$/O$_2$ plasma on shallow, negative nitrogen vacancy (NV$^-$) centers. We ignite and sustain using our 0V-bias plasma using purely inductive coupling. To this end, we pre-treat surfaces of high purity chemical vapor deposited single-crystal diamond (SCD). Subsequently, we create $sim$10 nm deep NV$^-$ centers via implantation and annealing. Onto the annealed SCD surface, we fabricate nanopillar structures that efficiently waveguide the photoluminescence (PL) of shallow NV$^-$. Characterizing single NV$^-$ inside these nanopillars, we find that the Ar/SF$_6$/O$_2$ plasma treatment quenches NV$^-$ PL even considering that the annealing and cleaning steps following ion implantation remove any surface termination. In contrast, for our 0V-bias as well as biased O$_2$ plasma, we observe stable NV$^-$ PL and low background fluorescence from the photonic nanostructures.
The dependence of the luminescence of diamonds with negatively charged nitrogen-vacancy centers (NV-) vs. applied magnetic field (magnetic spectrum) was studied. A narrow line in zero magnetic field was discovered. The properties of this line are considerably different from those of other narrow magnetic spectrum lines. Its magnitude is weakly dependent of the orientation of the single-crystal sample to the external magnetic field. This line is also observed in a powdered sample. The shape of the line changes greatly when excitation light polarization is varied. The magnitude of the line has a non-linear relation to excitation light intensity. For low intensities this dependence is close to a square law. To explain the mechanism giving rise to this line in the magnetic spectrum, we suggest a model based on the dipole-dipole interaction between different NV- centers.
Nanodiamonds containing color centers open up many applications in quantum information processing, metrology, and quantum sensing. In particular, silicon vacancy (SiV) centers are prominent candidates as quantum emitters due to their beneficial optical qualities. Here we characterize nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centers. Our results show that nanodiamond growth can be controlled and optimized for different applications.
Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex interplay between interactions, internal fields and lattice strain. Working with the nitrogen-vacancy (NV) center in diamond, we demonstrate that local electric fields dominate the magnetic resonance behavior of NV ensembles at low magnetic field. We introduce a simple microscopic model that quantitatively captures the observed spectra for samples with NV concentrations spanning over two orders of magnitude. Motivated by this understanding, we propose and implement a novel method for the nanoscale localization of individual charges within the diamond lattice; our approach relies upon the fact that the charge induces an NV dark state which depends on the electric field orientation.
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