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Register a new userPlasma treatments and photonic nanostructures for shallow nitrogen vacancy centers in diamond
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We investigate the influence of plasma treatments, especially a 0V-bias, potentially low damage O$_2$ plasma as well as a biased Ar/SF$_6$/O$_2$ plasma on shallow, negative nitrogen vacancy (NV$^-$) centers. We ignite and sustain using our 0V-bias plasma using purely inductive coupling. To this end, we pre-treat surfaces of high purity chemical vapor deposited single-crystal diamond (SCD). Subsequently, we create $sim$10 nm deep NV$^-$ centers via implantation and annealing. Onto the annealed SCD surface, we fabricate nanopillar structures that efficiently waveguide the photoluminescence (PL) of shallow NV$^-$. Characterizing single NV$^-$ inside these nanopillars, we find that the Ar/SF$_6$/O$_2$ plasma treatment quenches NV$^-$ PL even considering that the annealing and cleaning steps following ion implantation remove any surface termination. In contrast, for our 0V-bias as well as biased O$_2$ plasma, we observe stable NV$^-$ PL and low background fluorescence from the photonic nanostructures.
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We demonstrate a robust experimental method for determining the depth of individual shallow Nitrogen-Vacancy (NV) centers in diamond with $sim1$ nm uncertainty. We use a confocal microscope to observe single NV centers and detect the proton nuclear magnetic resonance (NMR) signal produced by objective immersion oil, which has well understood nuclear spin properties, on the diamond surface. We determine the NV center depth by analyzing the NV NMR data using a model that describes the interaction of a single NV center with the statistically-polarized proton spin bath. We repeat this procedure for a large number of individual, shallow NV centers and compare the resulting NV depths to the mean value expected from simulations of the ion implantation process used to create the NV centers, with reasonable agreement.
In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$mu$m) platforms, are highly relevant for nanoscale sensing. The presented top-down procedure includes electron beam lithography (EBL) as well as reactive ion etching (RIE). Our method introduces a novel type of inter-layer, namely silicon, that significantly enhances the adhesion of hydrogen silsesquioxane (HSQ) electron beam resist to SCD and avoids sample charging during EBL. In contrast to previously used adhesion layers, our silicon layer can be removed using a highly-selective RIE step which is not damaging HSQ mask structures. We thus refine published nanofabrication processes to ease a higher process reliability especially in the light of the advancing commercialization of SCD sensor devices.
We demonstrate a robust, scale-factor-free vector magnetometer, which uses a closed-loop frequency-locking scheme to simultaneously track Zeeman-split resonance pairs of nitrogen-vacancy (NV) centers in diamond. Compared with open-loop methodologies, this technique is robust against fluctuations in temperature, resonance linewidth, and contrast; offers a three-order-of-magnitude increase in dynamic range; and allows for simultaneous interrogation of multiple transition frequencies. By directly detecting the resonance frequencies of NV centers aligned along each of the diamonds four tetrahedral crystallographic axes, we perform full vector reconstruction of an applied magnetic field.
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are formed from substitutional nitrogen (P1 centers) defects and vacancies in the diamond lattice. Maximizing the concentration of NVs is most beneficial, which justifies the search for methods with a high yield of conversion from P1 to NV$^-$. We report here the characterization of surface cleaned fluorescent micro- and nanodiamonds, obtained by irradiation of commercial diamond powder with high-energy (10 MeV) electrons and simultaneous annealing at 800{deg}C. Using this technique and increasing the irradiation dose, we demonstrate the creation of NV$^-$ with up to 25 % conversion yield. Finally, we monitor the creation of irradiation-induced spin-1 defects in microdiamond particles, which we associate with W16 and W33 centers, and investigate the effects of irradiation dose and particle size on the coherence time of NV$^-$.
The charge degree of freedom in solid-state defects fundamentally underpins the electronic spin degree of freedom, a workhorse of quantum technologies. Here we study charge state properties of individual near-surface nitrogen-vacancy (NV) centers in diamond, where NV$^{-}$ hosts the metrologically relevant electron spin. We find that NV$^{-}$ initialization fidelity varies between individual centers and over time, and we alleviate the deleterious effects of reduced NV$^{-}$ initialization fidelity via logic-based initialization. We also find that NV$^{-}$ can ionize in the dark, which compromises spin measurements but is mitigated by measurement protocols we present here. We identify tunneling to a single, local electron trap as the mechanism for ionization in the dark and we develop NV-assisted techniques to control and readout the trap charge state. Our understanding and command of the NVs local electrostatic environment will simultaneously guide materials design and provide novel functionalities with NV centers.
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