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Register a new userMicromagnetics of thin films in the presence of Dzyaloshinskii-Moriya interaction
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Added by
Michele Ruggeri
Publication date
2020
fields
Informatics Engineering
and research's language is
English
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In this paper, we study the thin-film limit of the micromagnetic energy functional in the presence of bulk Dzyaloshinskii-Moriya interaction (DMI). Our analysis includes both a stationary $Gamma$-convergence result for the micromagnetic energy, as well as the identification of the asymptotic behavior of the associated Landau-Lifshitz-Gilbert equation. In particular, we prove that, in the limiting model, part of the DMI term behaves like the projection of the magnetic moment onto the normal to the film, contributing this way to an increase in the shape anisotropy arising from the magnetostatic self-energy. Finally, we discuss a convergent finite element approach for the approximation of the time-dependent case and use it to numerically compare the original three-dimensional model with the two-dimensional thin-film limit.
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The Dzyaloshinskii-Moriya interaction (DMI), being one of the origins for chiral magnetism, is currently attracting huge attention in the research community focusing on applied magnetism and spintronics. For future applications an accurate measurement of its strength is indispensable. In this work, we present a review of the state of the art of measuring the coefficient $D$ of the Dzyaloshinskii-Moriya interaction, the DMI constant, focusing on systems where the interaction arises from the interface between two materials. The measurement techniques are divided into three categories: a) domain wall based measurements, b) spin wave based measurements and c) spin orbit torque based measurements. We give an overview of the experimental techniques as well as their theoretical background and models for the quantification of the DMI constant $D$. We analyze the advantages and disadvantages of each method and compare $D$ values in different stacks. The review aims to obtain a better understanding of the applicability of the different techniques to different stacks and of the origin of apparent disagreement of literature values.
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Topological defects in magnetism have attracted great attention due to fundamental research interests and potential novel spintronics applications. Rich examples of topological defects can be found in nanoscale non-uniform spin textures, such as monopoles, domain walls, vortices, and skyrmions. Recently, skyrmions stabilized by the Dzyaloshinskii-Moriya interaction have been studied extensively. However, the stabilization of antiskyrmions is less straightforward. Here, using numerical simulations we demonstrate that antiskyrmions can be a stable spin configuration in the presence of anisotropic Dzyaloshinskii-Moriya interaction. We find current-driven antiskyrmion motion that has a transverse component, namely antiskyrmion Hall effect. The antiskyrmion gyroconstant is opposite to that for skyrmion, which allows the current-driven propagation of coupled skyrmion-antiskyrmion pairs without apparent skyrmion Hall effect. The antiskyrmion Hall angle strongly depends on the current direction, and a zero antiskyrmion Hall angle can be achieved at a critic current direction. These results open up possibilities to tailor the spin topology in nanoscale magnetism, which may be useful in the emerging field of skyrmionics.
We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the Co layer thickness dependence of saturation magnetisation, perpendicular magnetic anisotropy, and symmetric and antisymmetric (i.e. DM) exchange energies in Pt/Co/Ir thin films have been made to determine the relationship between these properties. We discuss the measurement of the DM interaction by the expansion of a reverse domain in the domain wall creep regime. We show how the creep parameters behave as a function of in-plane bias field and discuss the effects of domain wall roughness on the measurement of the DM interaction by domain expansion. Whereas modifications to the creep law with DM field and in-plane bias fields have taken into account changes in the energy barrier scaling parameter $alpha$, we find that both $alpha$ and the velocity scaling parameter $v_{0}$ change as a function of in-plane bias field.
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