No Arabic abstract
A CMY colour camera differs from its RGB counterpart in that it employs a subtractive colour space of cyan, magenta and yellow. CMY cameras tend to performs better than RGB cameras in low light conditions due to their much higher transmittance. However, conventional CMY colour filter technology made of pigments and dyes are limited in performance for the next generation image sensors with submicron pixel sizes. These conventional filters are difficult to fabricate at nanoscale dimensions as they use their absorption properties to subtract colours. This paper presents a CMOS compatible nanoscale thick CMY colour mosaic made of Al-TiO2-Al nanorods forming an array 0.82 million colour pixels of 4.4 micron each, arranged in a CMYM pattern. The colour mosaic was then integrated onto a MT9P031 monochrome image sensor to make a CMY camera and the colour imaging demonstrated using a 12 colour Macbeth chart. The developed technology will have applications in astronomy, low exposure time imaging in biology and photography.
A multispectral image camera captures image data within specific wavelength ranges in narrow wavelength bands across the electromagnetic spectrum. Images from a multispectral camera can extract additional information that the human eye or a normal camera fails to capture and thus may have important applications in precision agriculture, forestry, medicine and object identification. Conventional multispectral cameras are made up of multiple image sensors each fitted with a narrow passband wavelength filter and optics, which makes them heavy, bulky, power hungry and very expensive. The multiple optics also create image co-registration problem. Here, we demonstrate a single sensor based three band multispectral camera using a narrow spectral band RGB colour mosaic in a Bayer pattern integrated on a monochrome CMOS sensor. The narrow band colour mosaic is made of a hybrid combination of plasmonic colour filters and heterostructured dielectric multilayer. The demonstrated camera technology has reduced cost, weight, size and power by almost n times (where n is the number of bands) compared to a conventional multispectral camera.
Camera image sensors can be used to detect ionizing radiation in addition to optical photons. In particular, cosmic-ray muons are detected as long, straight tracks passing through multiple pixels. The distribution of track lengths can be related to the thickness of the active (depleted) region of the camera image sensor through the known angular distribution of muons at sea level. We use a sample of cosmic-ray muon tracks recorded by the Distributed Electronic Cosmic-ray Observatory to measure the thickness of the depletion region of the camera image sensor in a commercial smart phone, the HTC Wildfire S. The track length distribution prefers a cosmic-ray muon angular distribution over an isotropic distribution. Allowing either distribution, we measure the depletion thickness to be between 13.9~$mu$m and 27.7~$mu$m. The same method can be applied to additional models of image sensor. Once measured, the thickness can be used to convert track length to incident polar angle on a per-event basis. Combined with a determination of the incident azimuthal angle directly from the track orientation in the sensor plane, this enables direction reconstruction of individual cosmic-ray events.
Recently CMOS (complementary metal-oxide semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. While operating the device at room temperature, we measure energy resolutions (FWHM) of 48 eV at 250 eV and 83 eV at 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e- analog noise and a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the results are averaged. Each signal measurement is statistically independent and by averaging the electronic readout noise is reduced to a level where single photons can be distinguished reliably. A pixel design using this method has been simulated in TCAD and several layouts have been generated for a 180 nm CMOS image sensor process. Using simulations, the noise performance of the pixel has been determined as a function of the number of samples, sense node capacitance, sampling rate, and transistor characteristics. The strengths and the limitations of the proposed design are discussed in detail, including the trade-off between noise performance and readout rate and the impact of charge transfer inefficiency. The projected performance of our first prototype device indicates that single-photon imaging is within reach and could enable ground-breaking performance in many scientific and industrial imaging applications.