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Register a new userA Low-Noise CMOS Pixel Direct Charge Sensor, Topmetal-II-
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We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge. Each pixel contains a low-noise charge-sensitive preamplifier to establish the analog signal and a discriminator with tunable threshold to generate hits. The analog signal from each pixel is accessible through time-shared multiplexing over the entire array. Hits are read out digitally through a column-based priority logic structure. Tests show that the sensor achieved a <15e- analog noise and a 200e- minimum threshold for digital readout per pixel. The sensor is capable of detecting both electrons and ions drifting in gas. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments.
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We present the detailed study of the digital readout of Topmetal-II- CMOS pixel direct charge sensor. Topmetal-II- is an integrated sensor with an array of 72X72 pixels each capable of directly collecting external charge through exposed metal electrodes in the topmost metal layer. In addition to the time-shared multiplexing readout of the analog output from Charge Sensitive Amplifiers in each pixel, hits are also generated through comparators with individually DAC settable thresholds in each pixel. The hits are read out via a column-based priority logic structure, retaining both hit location and time information. The in-array column-based priority logic is fully combinational hence there is no clock distributed in the pixel array. Sequential logic and clock are placed on the peripheral of the array. We studied the detailed working behavior and performance of this readout, and demonstrated its potential in imaging applications.
We propose a novel charge sensing concept for high-pressure Time Projection Chamber (TPC) to search for Neutrinoless Double-Beta Decay (NLDBD) with ton-scale isotope mass and beyond. A meter-sized plane, tiled with an array of CMOS integrated sensors called Topmetal that directly collect charge without gas avalanche gain, is to be deployed into a high-pressure gaseous TPC with working gases containing suitable NLDBD candidate isotopes such as Xe-136 and Se-82. The Topmetal sensor has an electronic noise <30 e- per pixel, which allows the detector to reach <1% FWHM energy resolution at the NLDBD Q-value for both Xe-136 and 82SeF6 gases by measuring ionization charges alone. The elimination of charge avalanche gain allows the direct sensing of slow-drifting ions, which enables the use of highly electronegative gas SeF6 in which free electrons do not exist. It supports the swapping of working gases without hardware modification, which is a unique way to validate signals against radioactive backgrounds. Since the sensor manufacturing and plane assembling could leverage unaltered industrial mass-production processes, stability, uniformity, scalability, and cost-effectiveness that are required for ton-scale experiments could all be reached. The strengths of TPC such as 3D ionization tracking and decay daughter tagging are retained. This development could lead to a competitive NLDBD experiment at and above ton-scale. The conceptual considerations, simulations, and initial prototyping are discussed.
The Mu3e experiment is searching for the charged lepton flavour violating decay $ mu^+rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers of $50, mutext{m}$ thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed in a $1,text{T}$ magnetic field. The measurement of the trajectories of the decay particles allows for a precise vertex and momentum reconstruction. Additional layers of fast scintillating fibre and tile detectors provide sub-nanosecond time resolution. The MuPix8 chip is the first large scale prototype, proving the scalability of the HV-MAPS technology. It is produced in the AMS aH18 $180, text{nm}$ HV-CMOS process. It consists of three sub-matrices, each providing an untriggered datastream of more than $10,text{MHits}/text{s}$. The latest results from laboratory and testbeam characterisation are presented, showing an excellent performance with efficiencies $>99.6,text{%}$ and a time resolution better than $10, text{ns}$ achieved with time walk correction.
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1cdot 10^{14}$ and $5cdot 10^{15}$ 1-MeV-n$_textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85,$V. The sample irradiated to a fluence of $1cdot 10^{15}$ n$_textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Omega$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$cdot$10$^{15}$ n$_{mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $mu$m) with substrate biased through the implant on top and thinned (200 $mu$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns shaping time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $mu$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$cdot$10$^{15}$ n$_{mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.
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