No Arabic abstract
The thermoelectric properties of conductors with low electron density can be altered significantly by an applied magnetic field. For example, recent work has shown that Dirac/Weyl semimetals with a single pocket of carriers can exhibit a large enhancement of thermopower when subjected to a sufficiently large field that the system reaches the extreme quantum limit, in which only a single Landau level is occupied. Here we study the magnetothermoelectric properties of compensated semimetals, for which pockets of electron- and hole-type carriers coexist at the Fermi level. We show that, when the compensation is nearly complete, such systems exhibit a huge enhancement of thermopower starting at a much smaller magnetic field, such that $omega_ctau > 1$, and the stringent conditions associated with the extreme quantum limit are not necessary. We discuss our results in light of recent measurements on the compensated Weyl semimetal tantalum phosphide, in which an enormous magnetothermoelectric effect was observed. We also calculate the Nernst coefficient of compensated semimetals, and show that it exhibits a maximum value with increasing magnetic field that is much larger than in the single band case. In the dissipationless limit, where the Hall angle is large, the thermoelectric response can be described in terms of quantum Hall edge states, and we use this description to generalize previous results to the multi-band case.
We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAl$X$ ($X$=Si, Ge) via a first-principles approach with maximally localized Wannier functions. We show that the strong intrinsic SHE in LaAl$X$ originates from the multiple slight anticrossings of nodal lines and points near $E_F$ due to their high mirror symmetry and large spin-orbit interaction. It is further found that both electrical and thermal means can enhance the spin Hall conductivity ($sigma_{SH}$). However, the former also increases the electrical conductivity ($sigma_{c}$), while the latter decreases it. As a result, the independent tuning of $sigma_{SH}$ and $sigma_{c}$ by thermal means can enhance the spin Hall angle (proportional to $frac{sigma_{SH}}{sigma_{c}}$), a figure of merit of charge-to-spin current interconversion of spin-orbit torque devices. The underlying physics of such independent changes of the spin Hall and electrical conductivity by thermal means is revealed through the band-resolved and $k$-resolved spin Berry curvature. Our finding offers a new way in the search of high SHA materials for room-temperature spin-orbitronics applications.
Charge separation is a critical process for achieving high efficiencies in organic photovoltaic cells. The initial tightly bound excitonic electron-hole pair has to dissociate fast enough in order to avoid photocurrent generation and thus power conversion efficiency loss via geminate recombination. Such process takes place assisted by transitional states that lie between the initial exciton and the free charge state. Due to spin conservation rules these intermediate charge transfer states typically have singlet character. Here we propose a donor-acceptor model for a generic organic photovoltaic cell in which the process of charge separation is modulated by a magnetic field which tunes the energy levels. The impact of a magnetic field is to intensify the generation of charge transfer states with triplet character via inter-system crossing. As the ground state of the system has singlet character, triplet states are recombination-protected, thus leading to a higher probability of successful charge separation. Using the open quantum systems formalism we demonstrate that not only the population of triplet charge transfer states grows in the presence of a magnetic field, but also how the power outcome of an organic photovoltaic cell is in that way increased.
Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2{pi} domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2{pi}DWs below a compensation temperature (TComp), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 {AA}) of each Gd layer, where magnetization is aligned perpendicular (in-plane) to an applied field. These magnetic roughness are vertically correlated and results into Bragg sheet in spin flip channel of Off-specular PNR data, which is contributing towards an antisymmetric magnetoresistance at TComp in the system. The growth and tunability of highly correlated magnetic inhomogeneities (roughness) and domain structure around TComp in combination of twisted helical magnetic structure with planar 2{pi}DWs will be key for application in all-spin-based technology.
It is well known that the electronic thermal conductivity of clean compensated semimetals can be greatly enhanced over the electric conductivity by the availability of an ambipolar mechanism of conduction, whereby electrons and holes flow in the same direction experiencing negligible Coulomb scattering as well as negligible impurity scattering. This enhancement -- resulting in a breakdown of the Wiedemann-Franz law with an anomalously large Lorenz ratio -- has been recently observed in two-dimensional monolayer and bilayer graphene near the charge neutrality point. In contrast to this, three-dimensional compensated semimetals such as WP$_2$ and Sb are typically found to show a reduced Lorenz ratio. This dramatic difference in behavior is generally attributed to different regimes of Fermi statistics in the two cases: degenerate electron-hole liquid in compensated semimetals versus non-degenerate electron-hole liquid in graphene. We show that this difference is not sufficient to explain the reduction of the Lorenz ratio in compensated semimetals. We argue that the solution of the puzzle lies in the ability of compensated semimetals to sustain sizeable regions of electron-hole accumulation near the contacts, which in turn is a consequence of the large separation of electron and hole pockets in momentum space. These accumulations suppress the ambipolar conduction mechanism and effectively split the system into two independent electron and hole conductors. We present a quantitative theory of the crossover from ambipolar to unipolar conduction as a function of the size of the electron-hole accumulation regions, and show that it naturally leads to a sample-size-dependent thermal conductivity.
We report giant thermopower S = 2.5 mV/K in CoSbS single crystals, a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low temperature thermopower induced by magnetic field point to mechanism of electronic diffusion of carriers in the heavy valence band. Intrinsic magnetic susceptibility is consistent with the Kondo- Insulator-like accumulation of electronic states around the gap edges. This suggests that giant thermopower stems from temperature-dependent renormalization of the non-interacting bands and buildup of the electronic correlations on cooling.