No Arabic abstract
Charge separation is a critical process for achieving high efficiencies in organic photovoltaic cells. The initial tightly bound excitonic electron-hole pair has to dissociate fast enough in order to avoid photocurrent generation and thus power conversion efficiency loss via geminate recombination. Such process takes place assisted by transitional states that lie between the initial exciton and the free charge state. Due to spin conservation rules these intermediate charge transfer states typically have singlet character. Here we propose a donor-acceptor model for a generic organic photovoltaic cell in which the process of charge separation is modulated by a magnetic field which tunes the energy levels. The impact of a magnetic field is to intensify the generation of charge transfer states with triplet character via inter-system crossing. As the ground state of the system has singlet character, triplet states are recombination-protected, thus leading to a higher probability of successful charge separation. Using the open quantum systems formalism we demonstrate that not only the population of triplet charge transfer states grows in the presence of a magnetic field, but also how the power outcome of an organic photovoltaic cell is in that way increased.
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.
The thermoelectric properties of conductors with low electron density can be altered significantly by an applied magnetic field. For example, recent work has shown that Dirac/Weyl semimetals with a single pocket of carriers can exhibit a large enhancement of thermopower when subjected to a sufficiently large field that the system reaches the extreme quantum limit, in which only a single Landau level is occupied. Here we study the magnetothermoelectric properties of compensated semimetals, for which pockets of electron- and hole-type carriers coexist at the Fermi level. We show that, when the compensation is nearly complete, such systems exhibit a huge enhancement of thermopower starting at a much smaller magnetic field, such that $omega_ctau > 1$, and the stringent conditions associated with the extreme quantum limit are not necessary. We discuss our results in light of recent measurements on the compensated Weyl semimetal tantalum phosphide, in which an enormous magnetothermoelectric effect was observed. We also calculate the Nernst coefficient of compensated semimetals, and show that it exhibits a maximum value with increasing magnetic field that is much larger than in the single band case. In the dissipationless limit, where the Hall angle is large, the thermoelectric response can be described in terms of quantum Hall edge states, and we use this description to generalize previous results to the multi-band case.
The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. While CT state dynamics following electron transfer from donor to acceptor have been widely studied, there is not much known about the dynamics of bound CT states produced by hole transfer from the acceptor to the donor. In this letter, we compare the dynamics of CT states formed in the different charge-transfer pathways in a range of model systems. We show that the nature and dynamics of the generated CT states are similar in the case of electron and hole transfer. However the yield of bound and free charges is observed to be strongly dependent on the HOMOD-HOMOA and LUMOD-LUMOA energy differences of the material system. We propose a qualitative model in which the effects of static disorder and sampling of states during the relaxation determine the probability of accessing CT states favourable for charge separation.
The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Lande g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called {Delta}g mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.