No Arabic abstract
Using spin dependent specular and off-specular polarized neutron reflectivity (PNR), we report the observation of a twisted helical magnetic structure with planar 2{pi} domain wall (DW) and highly correlated magnetic domains in a Gd/Co multilayer. Specular PNR with polarization analysis reveals the formation of planar 2{pi}DWs below a compensation temperature (TComp), resulting to positive exchange bias in this system. Off-specular PNR with spin polarization showed development of magnetic inhomogenities (increase in magnetic roughness) for central part (thickness ~ 25-30 {AA}) of each Gd layer, where magnetization is aligned perpendicular (in-plane) to an applied field. These magnetic roughness are vertically correlated and results into Bragg sheet in spin flip channel of Off-specular PNR data, which is contributing towards an antisymmetric magnetoresistance at TComp in the system. The growth and tunability of highly correlated magnetic inhomogeneities (roughness) and domain structure around TComp in combination of twisted helical magnetic structure with planar 2{pi}DWs will be key for application in all-spin-based technology.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center $Gamma$ and one ellipsoidal electron FS at the BZ boundary $X$. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but share many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be explained by the Zeeman splitting of the localized states that suppresses the spin dependent hopping paths in the presence of on-site Coulomb repulsion.
We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used. An extended model including spin transport within the Co layer cannot account for the large SMR. To identify its origin, contributions from other sources are studied. For most bilayers, the SMR increases with decreasing temperature and increasing magnetic field, indicating that magnon-related effects in the Co layer play little role. Without the Pt layer, we do not observe the large SMR found for the Pt/Co bilayers with thick Co. Implementing the effect of the so-called interface magnetoresistance and the textured induced anisotropic scattering cannot account for the Co thickness dependent SMR. Since the large SMR is present for W/Co but its magnitude reduces in W/CoFeB, we infer its origin is associated with a particular property of Co.
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus spin-orbit couplings that appear at junction interfaces and in the tunneling region. We also investigate the transport properties of ferromagnet/semiconductor/ferromagnet tunnel junctions and show that in such structures the spin-orbit interaction leads not only to the TAMR effect but also to the anisotropy of the conventional tunneling magnetoresistance (TMR). The resulting anisotropic tunneling magnetoresistance (ATMR) depends on the absolute magnetization directions in the ferromagnets. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus spin-orbit couplings produces differences between the rates of transmitted and reflected spins at the ferromagnet/seminconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Furthermore, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.