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Register a new userGrowth of a textured quasicrystalline phase in Ti-Ni-Zr films prepared by pulsed laser deposition
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Valerie Brien
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The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^circ$C. Morphological and structural modifications have been followed by grazing incidence and $theta$-2$theta$ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by Electron Probe Micro-Analysis. The in-depth variation of composition has been studied by Secondary Neutral Mass Spectroscopy. We show that Pulsed Laser Deposition at 275$^circ$C makes the formation of a 1 m thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible.
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Pulsed laser deposition from a Nd:YAG laser was employed in production of hundreds of nanometer thick quasicrystalline Ti-Zr-Ni films on glass substrate. The influence of deposition temperature Ts on the structure, morphology and microstructure of the films across their thickness was investigated. The morphology and microstructure features were evaluated by X-ray diffraction and transmission electron microscopy techniques. The low deposition temperatures were found to produce films with nanometer sized grains embedded in an amorphous matrix. The grains exhibit quasicrystalline order. The higher deposition temperatures lead to films whose structure is not uniform all along the growth direction. The layer in contact with the substrate is a very thin amorphous layer. The main part of the film consists of crystallized columns. The columns have grown from a nano-crystallized layer where the size of crystallites increases with increasing thickness.
We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 +/- 1 and 156 +/- 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ~3 MV/cm with an efficiency of 72.8 +/- 0.6 % in optimum 30% Zr substituted BaTiO3 composition.
Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining) bulk. Studies of SmB6 thin films represent a favorable approach allowing well defined variations of the bulk volume that is not affected by surface states. Moreover, thin films are highly desirable for potential technology applications. However, the growth of SmB6 thin films is accompanied by technology problems, which are typically associated with maintaining the correct stoichiometry of samarium and boron. Here we present feasibility study of SmB6 thin film synthesis by pulsed laser deposition (PLD) from a single stoichiometric SmB6 target. As proved by Rutherford Backscattering Spectrometry (RBS), we succeeded to obtain the same ratio of samarium and boron in the films as that in the target. Thin films revealing characteristic electrical properties of (crystalline) SmB6 were successfully deposited on MgO, sapphire, and glass-ceramics substrates, when the substrates were kept at temperature of 600$^circ$ C during the deposition. Performed electrical resistance studies have revealed that bulk properties of the films are only slightly affected by the substrate. Our results indicate that PLD is a suitable method for complex and intensive research of SmB6 and similar systems.
Pulsed laser deposition, a non-equilibrium thin-film growth technique, was used to stabilize metastable tetragonal iron sulfide (FeS), the bulk state of which is known as a superconductor with a critical temperature of 4 K. Comprehensive experiments revealed four important factors to stabilize tetragonal FeS epitaxial thin films: (i) an optimum growth temperature of 300 {deg}C followed by thermal quenching, (ii) an optimum growth rate of ~7 nm/min, (iii) use of a high-purity bulk target, and (iv) use of a single-crystal substrate with small in-plane lattice mismatch (CaF2). Electrical resistivity measurements indicated that none of all the films exhibited superconductivity. Although an electric double-layer transistor structure was fabricated using the tetragonal FeS epitaxial film as a channel layer to achieve high-density carrier doping, no phase transition was observed. Possible reasons for the lack of superconductivity include lattice strain, off-stoichiometry of the film, electrochemical etching by the ionic liquid under gate bias, and surface degradation during device fabrication.
Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO2 thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [101] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations studied, the incorporation of Mo did not contribute to increase the conductivity of the films or to enhance the ferromagnetic order of the Co-doped films.
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