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Register a new userElectronic Properties of $alpha-mathcal{T}_3$ Quantum Dots in Magnetic Fields
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We address the electronic properties of quantum dots in the two-dimensional $alpha-mathcal{T}_3$ lattice when subjected to a perpendicular magnetic field. Implementing an infinite mass boundary condition, we first solve the eigenvalue problem for an isolated quantum dot in the low-energy, long-wavelength approximation where the system is described by an effective Dirac-like Hamiltonian that interpolates between the graphene (pseudospin 1/2) and Dice (pseudospin 1) limits. Results are compared to a full numerical (finite-mass) tight-binding lattice calculation. In a second step we analyse charge transport through a contacted $alpha-mathcal{T}_3$ quantum dot in a magnetic field by calculating the local density of states and the conductance within the kernel polynomial and Landauer-Buttiker approaches. Thereby the influence of a disordered environment is discussed as well.
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We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $alpha$-$mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudomagnetic field having an opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dots width and width-to-height ratio, we detect different transport regimes with and without valley filtering for both the $alpha$-$mathcal{T}_3$ and dice lattice structures. In addition, we analyze the essence of the conductance resonances with a high valley polarization in terms of related (pseudo-) Landau levels, the spatial distribution of the local density of states, and the local current densities. The observed local charge and current density patterns reflect the local inversion symmetry breaking by the strain, besides the global inversion symmetry breaking due to the scaling parameter $alpha$. By this way we can also filter out different sublattices.
The transport through a quantum wire exposed to two magnetic spikes in series is modeled. We demonstrate that quantum dots can be formed this way which couple to the leads via magnetic barriers. Conceptually, all quantum dot states are accessible by transport experiments. The simulations show Breit-Wigner resonances in the closed regime, while Fano resonances appear as soon as one open transmission channel is present. The system allows to tune the dots confinement potential from sub-parabolic to superparabolic by experimentally accessible parameters.
We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field. Coulomb blockade resonances of a 50 nm wide and 80 nm long dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 40 states as a function of the back gate voltage can be interpreted in terms of the unique evolution of the diamagnetic spectrum of a graphene dot including the formation of the E = 0 Landau level, situated in the center of the transport gap, and marking the electron-hole crossover.
Using the tight-binding approximation we calculated the magnetic susceptibility of graphene quantum dots (GQD) of different geometrical shapes and sizes, smaller than the magnetic length, when the magnetic properties are governed by the electron edge states. Two types of edge states can be discerned: the zero-energy states (ZES) located exactly at the zero-energy Dirac point, and the dispersed edge states (DES) with the energy close, but not exactly equal to zero. DES are responsible for the temperature independent diamagnetic response, while ZES provide the temperature dependent spin Curie paramagnetism. The hexagonal, circular and randomly shaped GQDs contain mainly DES and, as a result, they are diamagnetic. The edge states of the triangular GQDs are ZES and these dots reveal the interplay between the spin paramagnetism, dominating for small dots and at low temperatures, and bulk orbital diamagnetism, dominating for large dots and at high temperatures.
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of that material and an analysis of problems and perspectives.
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