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Register a new userValley filtering in strain-induced $alpha$-$mathcal{T}_3$ quantum dots
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We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $alpha$-$mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudomagnetic field having an opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dots width and width-to-height ratio, we detect different transport regimes with and without valley filtering for both the $alpha$-$mathcal{T}_3$ and dice lattice structures. In addition, we analyze the essence of the conductance resonances with a high valley polarization in terms of related (pseudo-) Landau levels, the spatial distribution of the local density of states, and the local current densities. The observed local charge and current density patterns reflect the local inversion symmetry breaking by the strain, besides the global inversion symmetry breaking due to the scaling parameter $alpha$. By this way we can also filter out different sublattices.
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We address the electronic properties of quantum dots in the two-dimensional $alpha-mathcal{T}_3$ lattice when subjected to a perpendicular magnetic field. Implementing an infinite mass boundary condition, we first solve the eigenvalue problem for an isolated quantum dot in the low-energy, long-wavelength approximation where the system is described by an effective Dirac-like Hamiltonian that interpolates between the graphene (pseudospin 1/2) and Dice (pseudospin 1) limits. Results are compared to a full numerical (finite-mass) tight-binding lattice calculation. In a second step we analyse charge transport through a contacted $alpha-mathcal{T}_3$ quantum dot in a magnetic field by calculating the local density of states and the conductance within the kernel polynomial and Landauer-Buttiker approaches. Thereby the influence of a disordered environment is discussed as well.
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactions is presently the subject of important open questions. Here we investigate the influence of valleys on exchange in a coupled donor/quantum dot system, a basic building block of recently proposed schemes for robust quantum information processing. Using a scanning tunneling microscope tip to position the quantum dot with sub-nm precision, we find a near monotonic exchange characteristic where lattice-aperiodic modulations associated with valley degrees of freedom comprise less than 2~% of exchange. From this we conclude that intravalley tunneling processes that preserve the donors $pm x$ and $pm y$ valley index are filtered out of the interaction with the $pm z$ valley quantum dot, and that the $pm x$ and $pm y$ intervalley processes where the electron valley index changes are weak. Complemented by tight-binding calculations of exchange versus donor depth, the demonstrated electrostatic tunability of donor/QD exchange can be used to compensate the remaining intravalley $pm z$ oscillations to realise uniform interactions in an array of highly coherent donor spins.
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universal behavior is observed in atomistic strain simulations (in terms of both strain magnitude and profile) of QDs with different shapes and materials. In this paper, this universal behavior is investigated by atomistic as well as analytic continuum models. Atomistic strain simulations are very accurate but computationally expensive. On the other hand, analytic continuum solutions are based on assumptions that significantly reduce the accuracy of the strain calculations, but are very fast. Both techniques indicate that the strain depends on the aspect ratio (AR) of the QDs, and not on the individual dimensions. Thus simple closed form equations are introduced which directly provide the atomistic strain values inside the QD as a function of the AR and the material parameters. Moreover, the conduction and valence band edges $E_{C/V}$ and their effective masses $m^*_{C/V}$ of the QDs are dictated by the strain and AR consequently. The universal dependence of atomistic strain on the AR is useful in many ways; Not only does it reduce the computational cost of atomistic simulations significantly, but it also provides information about the optical transitions of QDs given the knowledge of $E_{C/V}$ and $m^*_{C/V}$ from AR. Finally, these expressions are used to calculate optical transition wavelengths in InAs/GaAs QDs and the results agree well with experimental measurements and atomistic simulations.
We develop a theory of inter-valley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective-mass description of single-particle states, we study the two-electron system by fully including Coulomb interaction, spin-orbit coupling, and short-range disorder. We find that the energy level splittings associated with inter-valley scattering are nearly independent of the chiral angle and, while smaller than those due to spin-orbit interaction, large enough to be measurable.
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses <6 nm valley splitting is found to be >150 ueV. Using the unique advantage of atomistic calculations we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5, the splitting fluctuates with ~20 ueV for different disorder realizations. Through these simulations we can guide future experiments into regions of low device-to-device fluctuations.
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