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Register a new userDisorder information from conductance: a quantum inverse problem
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It is straightforward to calculate the conductance of a quantum device once all its scattering centers are fully specified. However, to do this in reverse, i.e., to find information about the composition of scatterers in a device from its conductance, is an elusive task. This is particularly more challenging in the presence of disorder. Here we propose a procedure in which valuable compositional information can be extracted from the seemingly noisy spectral conductance of a two-terminal disordered quantum device. In particular, we put forward an inversion methodology that can identify the nature and respective concentration of randomly-distributed impurities by analyzing energy-dependent conductance fingerprints. Results are shown for graphene nanoribbons as a case in point using both tight-binding and density functional theory simulations, indicating that this inversion technique is general, robust and can be employed to extract structural and compositional information of disordered mesoscopic devices from standard conductance measurements.
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Systems with the power-law quasiparticle dispersion $epsilon_{bf k}propto k^alpha$ exhibit non-Anderson disorder-driven transitions in dimensions $d>2alpha$, as exemplified by Weyl semimetals, 1D and 2D arrays of ultracold ions with long-range interactions, quantum kicked rotors and semiconductor models in high dimensions. We study the wavefunction structure in such systems and demonstrate that at these transitions they exhibit fractal behaviour with an infinite set of multifractal exponents. The multifractality persists even when the wavefunction localisation is forbidden by symmetry or topology and occurs as a result of elastic scattering between all momentum states in the band on length scales shorter than the mean free path. We calculate explicitly the multifractal spectra in semiconductors and Weyl semimetals using one-loop and two-loop renormalisation-group approaches slightly above the marginal dimension $d=2alpha$.
We investigate the electronic transport properties of unbiased and biased bilayer graphene nanoribbon in n-p and n-n junctions subject to a perpendicular magnetic field. Using the non-equilibrium Greens function method and the Landauer-B{u}ttiker formalism, the conductance is studied for the cases of clean, on-site, and edge disordered bilayer graphene. We show that the lowest Hall plateau remains unchanged in the presence of disorder, whereas asymmetry destroys both the plateaus and conductance quantization. In addition, we show that disorder induces an enhancement of the conductance in the n-p region in the presence of magnetic fields. Finally, we show that the equilibration of quantum Hall edge states between distinctively doped regions causes Hall plateaus to appear in the regime of complete mode mixing.
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