No Arabic abstract
The nonlinear Hall effect is an unconventional response, in which a voltage can be driven by two perpendicular currents in the Hall-bar measurement. Unprecedented in the family of the Hall effects, it can survive time-reversal symmetry but is sensitive to the breaking of discrete and crystal symmetries. It is a quantum transport phenomenon that has deep connection with the Berry curvature. However, a full quantum description is still absent. Here we construct a quantum theory of the nonlinear Hall effect by using the diagrammatic technique. Quite different from nonlinear optics, nearly all the diagrams account for the disorder effects, which play decisive role in the electronic transport. After including the disorder contributions in terms of the Feynman diagrams, the total nonlinear Hall conductivity is enhanced but its sign remains unchanged for the 2D tilted Dirac model, compared to the one with only the Berry curvature contribution. We discuss the symmetry of the nonlinear conductivity tensor and predict a pure disorder-induced nonlinear Hall effect for point groups $C_{3}$, $C_{3h}$, $C_{3v}$, $D_{3h}$, $D_{3}$ in 2D, and $T$, $T_{d}$, $C_{3h}$, $D_{3h}$ in 3D. This work will be helpful for explorations of the topological physics beyond the linear regime.
We report on numerical studies into the interplay of disorder and electron-electron interactions within the integer quantum Hall regime, where the presence of a strong magnetic field and two-dimensional confinement of the electronic system profoundly affects thermodynamic and transport properties. We emphasise the behaviour of the electronic compressibility, the local density of states, and the Kubo conductivity. Our treatment of the electron-electron interactions relies on the Hartree-Fock approximation so as to achieve system sizes comparable to experimental situations. Our results clearly exhibit manifestations of various interaction-mediated features, such as non-linear screening, local charging, and g-factor enhancement, implying the inadequacy of independent-particle models for comparison with experimental results.
The problems of the intermediate-range atomic structure of glasses and of the mechanism for the glass transition are approached from the low-temperature end in terms of a scenario for the atomic organization that justifies the use of an extended tunneling model. The latter is crucial for the explanation of the magnetic and compositional effects discovered in non-metallic glasses in the Kelvin and milli-Kelvin temperature range. The model relies on the existence of multi-welled local potentials for the effective tunneling particles that are a manifestation of a non-homogeneous atomic structure deriving from the established dynamical heterogeneities that characterize the supercooled liquid state. It is shown that the extended tunneling model can successfully explain a range of experiments at low temperatures, but the proposed non-homogeneous atomic structure scenario is then tested in the light of available high resolution electron microscopy imaging of the structure of some glasses and on the behaviour near the transition.
We present a topological description of quantum spin Hall effect (QSHE) in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings. We show that the topology of the band insulator can be characterized by a $2times 2$ traceless matrix of first Chern integers. The nontrivial QSHE phase is identified by the nonzero diagonal matrix elements of the Chern number matrix (CNM). A spin Chern number is derived from the CNM, which is conserved in the presence of finite disorder scattering and spin nonconserving Rashba coupling. By using the Laughlins gedanken experiment, we numerically calculate the spin polarization and spin transfer rate of the conducting edge states, and determine a phase diagram for the QSHE.
We demonstrate experimentally that graphene quantum capacitance $C_{mathrm{q}}$ can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of $C_{mathrm{q}}$ is manifested as an unusual parabolic gate voltage ($V_{mathrm{g}}$) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields $B$, the spectroscopy of longitudinal resistance ($R_{xx}$) vs. $V_{mathrm{g}}$ represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). $R_{xx}$ mapping vs. $V_{mathrm{g}}$ and $B$ thus reveals the vital role of the zero-energy LL on the development of the anomalously wide $ u=2$ quantum Hall state.
An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a {pi}/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of {pi}/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.