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We show that the resistivity rho(T) of disordered ferromagnets near, and above, the Curie temperature T_c generically exhibits a stronger anomaly than the scaling-based Fisher-Langer prediction. Treating transport beyond the Boltzmann description, we find that within mean-field theory, drho/dT exhibits a |T-T_c|^{-1/2} singularity near T_c. Our results, being solely due to impurities, are relevant to ferromagnets with low T_c, such as SrRuO3 or diluted magnetic semiconductors, whose mobility near T_c is limited by disorder.
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Weyl semimetals are a newly discovered class of materials that host relativistic massless Weyl fermions as their low-energy bulk excitations. Among this new class of materials, there exist two general types of semimetals that are of particular interest: type-I Weyl semimetals, that have broken inversion or time-reversal symmetry symmetry, and type-II Weyl semimetals, that additionally breaks Lorentz invariance. In this work, we use Born approximation to analytically demonstrate that the type-I Weyl semimetals may undergo a quantum phase transition to type-II Weyl semimetals in the presence of the finite charge and magnetic disorder when non-zero tilt exist. The phase transition occurs when the disorder renormalizes the topological mass, thereby reducing the Fermi velocity near the Weyl cone below the tilt of the cone. We also confirm the presence of the disorder induced phase transition in Weyl semimetals using exact diagonalization of a three-dimensional tight-binding model to calculate the resultant phase diagram of the type-I Weyl semimetal.
Systems with the power-law quasiparticle dispersion $epsilon_{bf k}propto k^alpha$ exhibit non-Anderson disorder-driven transitions in dimensions $d>2alpha$, as exemplified by Weyl semimetals, 1D and 2D arrays of ultracold ions with long-range interactions, quantum kicked rotors and semiconductor models in high dimensions. We study the wavefunction structure in such systems and demonstrate that at these transitions they exhibit fractal behaviour with an infinite set of multifractal exponents. The multifractality persists even when the wavefunction localisation is forbidden by symmetry or topology and occurs as a result of elastic scattering between all momentum states in the band on length scales shorter than the mean free path. We calculate explicitly the multifractal spectra in semiconductors and Weyl semimetals using one-loop and two-loop renormalisation-group approaches slightly above the marginal dimension $d=2alpha$.
It is straightforward to calculate the conductance of a quantum device once all its scattering centers are fully specified. However, to do this in reverse, i.e., to find information about the composition of scatterers in a device from its conductance, is an elusive task. This is particularly more challenging in the presence of disorder. Here we propose a procedure in which valuable compositional information can be extracted from the seemingly noisy spectral conductance of a two-terminal disordered quantum device. In particular, we put forward an inversion methodology that can identify the nature and respective concentration of randomly-distributed impurities by analyzing energy-dependent conductance fingerprints. Results are shown for graphene nanoribbons as a case in point using both tight-binding and density functional theory simulations, indicating that this inversion technique is general, robust and can be employed to extract structural and compositional information of disordered mesoscopic devices from standard conductance measurements.
In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium Green function approach, we address the scattering generated by the disorder up to the level of the maximally crossed diagrams, hereby capturing the interference among different, impurity-defined, Feynman paths. Our calculations of the charge current, and of the resulting differential conductance, reveal the logarithmic divergence typical of weak localization in linear transport. The main finding of our work is that the applied voltage suppresses the weak localization contribution in graphene, by introducing a dephasing time that decreases inversely with increasing voltage.
We study the localization properties of electrons in incommensurate twisted bilayer graphene for small angles, encompassing the narrow-band regime, by numerically exact means. Sub-ballistic states are found within the narrow-band region around the magic angle. Such states are delocalized in momentum-space and follow non-Poissonian level statistics, in contrast with their ballistic counterparts found for close commensurate angles. Transport results corroborate this picture: for large enough systems, the conductance decreases with system size for incommensurate angles within the sub-ballistic regime. Our results show that incommensurability effects are of crucial importance in the narrow-band regime. The incommensurate nature of a general twist angle must therefore be taken into account for an accurate description of magic-angle twisted bilayer graphene.
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