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Register a new userEnhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in thin ferromagnetic films by atomic-scale modulation of interfaces
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To stabilize the non-trivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI) must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show an effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and IDMI through the interface roughness engineering at the atomic scale offers a powerful tool for the development of the spin-orbitronic devices with the precise and reliable controllability of their functionality.
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The Dzyaloshinskii-Moriya interaction (DMI), being one of the origins for chiral magnetism, is currently attracting huge attention in the research community focusing on applied magnetism and spintronics. For future applications an accurate measurement of its strength is indispensable. In this work, we present a review of the state of the art of measuring the coefficient $D$ of the Dzyaloshinskii-Moriya interaction, the DMI constant, focusing on systems where the interaction arises from the interface between two materials. The measurement techniques are divided into three categories: a) domain wall based measurements, b) spin wave based measurements and c) spin orbit torque based measurements. We give an overview of the experimental techniques as well as their theoretical background and models for the quantification of the DMI constant $D$. We analyze the advantages and disadvantages of each method and compare $D$ values in different stacks. The review aims to obtain a better understanding of the applicability of the different techniques to different stacks and of the origin of apparent disagreement of literature values.
We study theoretically, via Monte Carlo simulations on lattices containing up to 1000 x 1000 spins, thermal creation of skyrmion lattices in a 2D ferromagnetic film with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction. At zero temperature, skyrmions only appear in the magnetization process in the presence of static disorder. Thermal fluctuations violate conservation of the topological charge and reduce the effective magnetic anisotropy that tends to suppress skyrmions. In accordance with recent experiments, we find that elevated temperatures assist the formation of skyrmion structures. Once such a structure is formed, it can be frozen into a regular skyrmion lattice by reducing the temperature. We investigate topological properties of skyrmion structures and find the average skyrmion size. Energies of domain and skyrmion states are computed. It is shown that skyrmion lattices have lower energy than labyrinth domains within a narrow field range.
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.
We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. At the same time, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA values remaining stable over large range of Co thickness give rise to formation of skyrmions with small applied external fields in the range of 200-250 mT up to 100 K temperatures. These findings open up further possibilities towards integrating two-dimensional (2D) materials in spin-orbitronics devices.
Chiral magnets are an emerging class of topological matter harbouring localized and topologically protected vortex-like magnetic textures called skyrmions, which are currently under intense scrutiny as a new entity for information storage and processing. Here, on the level of micromagnetics we rigorously show that chiral magnets cannot only host skyrmions but also antiskyrmions as least-energy configurations over all non-trivial homotopy classes. We derive practical criteria for their occurrence and coexistence with skyrmions that can be fulfilled by (110)-oriented interfaces in dependence on the electronic structure. Relating the electronic structure to an atomistic spin-lattice model by means of density-functional calculations and minimizing the energy on a mesoscopic scale applying spin-relaxation methods, we propose a double layer of Fe grown on a W(110) substrate as a practical example. We conjecture that ultrathin magnetic films grown on semiconductor or heavy metal substrates with $C_{2v}$ symmetry are prototype classes of materials hosting magnetic antiskyrmions.
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