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Register a new userPerpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface
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We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.
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We study theoretically, via Monte Carlo simulations on lattices containing up to 1000 x 1000 spins, thermal creation of skyrmion lattices in a 2D ferromagnetic film with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction. At zero temperature, skyrmions only appear in the magnetization process in the presence of static disorder. Thermal fluctuations violate conservation of the topological charge and reduce the effective magnetic anisotropy that tends to suppress skyrmions. In accordance with recent experiments, we find that elevated temperatures assist the formation of skyrmion structures. Once such a structure is formed, it can be frozen into a regular skyrmion lattice by reducing the temperature. We investigate topological properties of skyrmion structures and find the average skyrmion size. Energies of domain and skyrmion states are computed. It is shown that skyrmion lattices have lower energy than labyrinth domains within a narrow field range.
We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in latter increases as a function of Co thickness and beyond three monolayers stabilizes with one order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. At the same time, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA values remaining stable over large range of Co thickness give rise to formation of skyrmions with small applied external fields in the range of 200-250 mT up to 100 K temperatures. These findings open up further possibilities towards integrating two-dimensional (2D) materials in spin-orbitronics devices.
The Dzyaloshinskii Moriya Interaction (DMI) at the heavy metal (HM) and ferromagnetic metal (FM) interface has been recognized as a key ingredient in spintronic applications. Here we investigate the chemical trend of DMI on the 5d band filling (5d^3~5d^10) of the HM element in HM/CoFeB/MgO multilayer thin films. DMI is quantitatively evaluated by measuring asymmetric spin wave dispersion using Brillouin light scattering. Sign reversal and 20 times modification of the DMI coefficient D have been measured as the 5d HM element is varied. The chemical trend can be qualitatively understood by considering the 5d and 3d bands alignment at the HM/FM interface and the subsequent orbital hybridization around the Fermi level. Furthermore, a positive correlation is observed between DMI and spin mixing conductance at the HM/FM interfaces. Our results provide new insights into the interfacial DMI for designing future spintronic devices.
A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Neel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed Neel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates.
To stabilize the non-trivial spin textures, e.g., skyrmions or chiral domain walls in ultrathin magnetic films, an additional degree of freedom such as the interfacial Dzyaloshinskii-Moriya interaction (IDMI) must be induced by the strong spin-orbit coupling (SOC) of a stacked heavy metal layer. However, advanced approaches to simultaneously control IDMI and perpendicular magnetic anisotropy (PMA) are needed for future spin-orbitronic device implementations. Here, we show an effect of atomic-scale surface modulation on the magnetic properties and IDMI in ultrathin films composed of 5d heavy metal/ferromagnet/4d(5d) heavy metal or oxide interfaces, such as Pt/CoFeSiB/Ru, Pt/CoFeSiB/Ta, and Pt/CoFeSiB/MgO. The maximum IDMI value corresponds to the correlated roughness of the bottom and top interfaces of the ferromagnetic layer. The proposed approach for significant enhancement of PMA and IDMI through the interface roughness engineering at the atomic scale offers a powerful tool for the development of the spin-orbitronic devices with the precise and reliable controllability of their functionality.
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