No Arabic abstract
Quantum materials that host a flat band, such as pseudospin-1 lattices and magic-angle twisted bilayer graphene, can exhibit drastically new physical phenomena including unconventional superconductivity, orbital ferromagnetism, and Chern insulating behaviors. We report a surprising class of electronic in-gap edge states in pseudospin-1 materials without the conventional need of band-inversion topological phase transitions or introducing magnetism via an external magnetic type of interactions. In particular, we find that, in two-dimensional gapped (insulating) Dirac systems of massive spin-1 quasiparticles, in-gap edge modes can emerge through only an {em electrostatic potential} applied to a finite domain. Associated with these unconventional edge modes are spontaneous formation of pronounced domain-wall spin textures, which exhibit the feature of out-of-plane spin-angular momentum locking on both sides of the domain boundary and are quite robust against boundary deformations and impurities despite a lack of an explicit topological origin. The in-gap modes are formally three-component evanescent wave solutions, akin to the Jackiw-Rebbi type of bound states. Such modes belong to a distinct class due to the following physical reasons: three-component spinor wave function, unusual boundary conditions, and a shifted flat band induced by the external scalar potential. Not only is the finding of fundamental importance, but it also paves the way for generating highly controllable in-gap edge states with emergent spin textures using the traditional semiconductor gate technology. Results are validated using analytic calculations of a continuum Dirac-Weyl model and tight-binding simulations of realistic materials through characterizations of local density of state spectra and resonant tunneling conductance.
We investigate topological states of two-dimensional (2D) triangular lattices with multi-orbitals. Tight-binding model calculations of a 2D triangular lattice based on $emph{p}_{x}$ and emph{p}_{y} orbitals exhibit very interesting doubly degenerate energy points at different positions ($Gamma$ and K/K$^{prime}$) in momentum space, with quadratic non-Dirac and linear Dirac band dispersions, respectively. Counterintuitively, the system shows a global topologically trivial rather than nontrivial state with consideration of spin-orbit coupling due to the destructive interference effect between the topological states at the $Gamma$ and K/K$^{prime}$ points. The topologically nontrivial state can emerge by introducing another set of triangular lattices to the system (bitriangular lattices) due to the breakdown of the interference effect. With first-principles calculations, we predict an intrinsic Chern insulating behavior (quantum anomalous Hall effect) in a family of 2D triangular lattice metal-organic framework of Co(C$_{21}$N$_{3}$H$_{15}$) (TPyB-Co) from this scheme. Our results provide a different path and theoretical guidance for the search for and design of new 2D topological quantum materials.
We study the collective dynamics of a two-dimensional honeycomb lattice of magnetic skyrmions. By performing large-scale micromagnetic simulations, we find multiple chiral and non-chiral edge modes of skyrmion oscillations in the lattice. The non-chiral edge states are due to the Tamm-Shockley mechanism, while the chiral ones are topologically protected against structure defects and hold different handednesses depending on the mode frequency. To interpret the emerging multiband nature of the chiral edge states, we generalize the massless Thieles equation by including a second-order inertial term of skyrmion mass as well as a third-order non-Newtonian gyroscopic term, which allows us to model the band structure of skrymion oscillations. Theoretical results compare well with numerical simulations. Our findings uncover the importance of high order effects in strongly coupled skyrmions and are helpful for designing novel topological devices.
Quantum anomalous Hall (QAH) effect appears in ferromagnetic topological insulators (FMTI) when a Dirac mass gap opens in the spectrum of the topological surface states (SS). Unaccountably, although the mean mass gap can exceed 28 meV (or ~320 K), the QAH effect is frequently only detectable at temperatures below 1 K. Using atomic-resolution Landau level spectroscopic imaging, we compare the electronic structure of the archetypal FMTI Cr_0.08(Bi_0.1Sb_0.9)_1.92Te_3 to that of its non-magnetic parent (Bi_0.1Sb_0.9)_2Te_3, to explore the cause. In (Bi_0.1Sb_0.9)_2Te_3, we find spatially random variations of the Dirac energy. Statistically equivalent Dirac energy variations are detected in Cr_0.08(Bi_0.1Sb_0.9)_1.92Te_3 with concurrent but uncorrelated Dirac mass gap disorder. These two classes of SS electronic disorder conspire to drastically suppress the minimum mass gap to below 100 {mu}eV for nanoscale regions separated by <1 {mu}m. This fundamentally limits the fully quantized anomalous Hall effect in Sb_2Te_3-based FMTI materials to very low temperatures.
We investigate the properties of a two-dimensional quasicrystal in the presence of a uniform magnetic field. In this configuration, the density of states (DOS) displays a Hofstadter butterfly-like structure when it is represented as a function of the magnetic flux per tile. We show that the low-DOS regions of the energy spectrum are associated with chiral edge states, in direct analogy with the Chern insulators realized with periodic lattices. We establish the topological nature of the edge states by computing the topological Chern number associated with the bulk of the quasicrystal. This topological characterization of the non-periodic lattice is achieved through a local (real-space) topological marker. This work opens a route for the exploration of topological insulating materials in a wide range of non-periodic lattice systems, including photonic crystals and cold atoms in optical lattices.
In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices.