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Register a new userSevere Dirac Mass Gap Suppression in Sb_2Te_3-based Quantum Anomalous Hall Materials
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Quantum anomalous Hall (QAH) effect appears in ferromagnetic topological insulators (FMTI) when a Dirac mass gap opens in the spectrum of the topological surface states (SS). Unaccountably, although the mean mass gap can exceed 28 meV (or ~320 K), the QAH effect is frequently only detectable at temperatures below 1 K. Using atomic-resolution Landau level spectroscopic imaging, we compare the electronic structure of the archetypal FMTI Cr_0.08(Bi_0.1Sb_0.9)_1.92Te_3 to that of its non-magnetic parent (Bi_0.1Sb_0.9)_2Te_3, to explore the cause. In (Bi_0.1Sb_0.9)_2Te_3, we find spatially random variations of the Dirac energy. Statistically equivalent Dirac energy variations are detected in Cr_0.08(Bi_0.1Sb_0.9)_1.92Te_3 with concurrent but uncorrelated Dirac mass gap disorder. These two classes of SS electronic disorder conspire to drastically suppress the minimum mass gap to below 100 {mu}eV for nanoscale regions separated by <1 {mu}m. This fundamentally limits the fully quantized anomalous Hall effect in Sb_2Te_3-based FMTI materials to very low temperatures.
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Quantum materials that host a flat band, such as pseudospin-1 lattices and magic-angle twisted bilayer graphene, can exhibit drastically new physical phenomena including unconventional superconductivity, orbital ferromagnetism, and Chern insulating behaviors. We report a surprising class of electronic in-gap edge states in pseudospin-1 materials without the conventional need of band-inversion topological phase transitions or introducing magnetism via an external magnetic type of interactions. In particular, we find that, in two-dimensional gapped (insulating) Dirac systems of massive spin-1 quasiparticles, in-gap edge modes can emerge through only an {em electrostatic potential} applied to a finite domain. Associated with these unconventional edge modes are spontaneous formation of pronounced domain-wall spin textures, which exhibit the feature of out-of-plane spin-angular momentum locking on both sides of the domain boundary and are quite robust against boundary deformations and impurities despite a lack of an explicit topological origin. The in-gap modes are formally three-component evanescent wave solutions, akin to the Jackiw-Rebbi type of bound states. Such modes belong to a distinct class due to the following physical reasons: three-component spinor wave function, unusual boundary conditions, and a shifted flat band induced by the external scalar potential. Not only is the finding of fundamental importance, but it also paves the way for generating highly controllable in-gap edge states with emergent spin textures using the traditional semiconductor gate technology. Results are validated using analytic calculations of a continuum Dirac-Weyl model and tight-binding simulations of realistic materials through characterizations of local density of state spectra and resonant tunneling conductance.
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The quantum Hall effect is shown on epitaxial graphene monolayers that were deliberately grown over substrate steps and subjected to harsh processing procedures, demonstrating the robustness of the epitaxial graphene monolayers and the immunity of their transport properties to temperature, contamination and substrate imperfections. The mobility of the monolayer C-face sample is 19,000 cm^2/Vs. This is an important step towards the realization of epitaxial graphene based electronics.
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions in Dirac materials due to quantum interference in scalar impurity scattering potentials. It reveals a striking crossover from positive to negative magnetoresistivity, uncovering strong competition between weak localization and weak antilocalization in multiple Cooperon modes at different chemical potentials, effective masses and finite temperatures. The work sheds light on the important role of strong coupling of the conduction and valence bands in the quantum interference transport in topological nontrivial and trivial Dirac materials.
The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting magnetic proximity effect on the TI surface from adjacent ferromagnet layers may provide an alternative approach to the QAHE by opening an exchange gap with less disorder than that in the doped system. Nevertheless, the engineering of a favorable heterointerface that realizes the QAHE based on the magnetic proximity effect remains to be achieved. Here, we report on the observation of the QAHE in a proximity coupled system of non-magnetic TI and ferromagnetic insulator (FMI). We have designed sandwich heterostructures of (Zn,Cr)Te/(Bi,Sb)2Te3/(Zn,Cr)Te that fulfills two prerequisites for the emergence of the QAHE; the formation of a sizable exchange gap at the TI surface state and the tuning of the Fermi energy into the exchange gap. The efficient proximity coupling in the all-telluride based heterostructure as demonstrated here will enable a realistic design of versatile tailor-made topological materials coupled with ferromagnetism, ferroelectricity, superconductivity, and so on.
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