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Register a new userTunable RF-photonic filtering with high out-of-band rejection in silicon
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The ever-increasing demand for high speed and large bandwidth has made photonic systems a leading candidate for the next generation of telecommunication and radar technologies. The photonic platform enables high performance while maintaining a small footprint and provides a natural interface with fiber optics for signal transmission. However, producing sharp, narrow-band filters that are competitive with RF components has remained challenging. In this paper, we demonstrate all-silicon RF-photonic multi-pole filters with $sim100times$ higher spectral resolution than previously possible in silicon photonics. This enhanced performance is achieved utilizing engineered Brillouin interactions to access long-lived phonons, greatly extending the available coherence times in silicon. This Brillouin-based optomechanical system enables ultra-narrow (3.5 MHz) multi-pole response that can be tuned over a wide ($sim10$ GHz) spectral band. We accomplish this in an all-silicon optomechanical waveguide system, using CMOS compatible fabrication techniques. In addition to bringing greatly enhanced performance to silicon photonics, we demonstrate reliability and robustness, necessary to transition silicon-based optomechanical technologies from the scientific bench-top to high-impact field-deployable technologies.
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As radiofrequency filtering plays a vital role in electromagnetic devices and systems, recently photonic techniques have been intensively studied to implement radiofrequency filters to harness wide frequency coverage, large instantaneous bandwidth, low frequency-dependent loss, flexible tunability and strong immunity to electromagnetic interference. However, one crucial challenge facing the photonic radiofrequency filter (PRF) is the less impressive out-of-band rejection. Here, to the best of our knowledge, we demonstrate a tunable PRF with a record out-of-band rejection of 80 dB, which is 3 dB higher than the maximum value (~77 dB) reported so far, when incorporating highly selective polarization control and large narrow-band amplification enabled by stimulated Brillouin scattering effect. In particular, this record rejection is arduous to be achieved for a narrow passband (e.g., a few megahertz) and a high finesse in a PRF. Moreover, the proposed PRF is an active one capable of providing negligible insertion loss and even signal gain. Tunable central frequency ranging from 2.1 to 6.1 GHz is also demonstrated. The proposed PRF will provide an ultra-high noise or clutter suppression for harsh electromagnetic scenarios, particularly when room-temperature implementation and remote distribution are needed.
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
In the development of high efficiency and high gradient RF-accelerators, RF waveguides and cavities have been designed with Photonic Band Gap (PBG) and fishnet- metamaterial structures. The designed structures are comprised of a periodically corrugated channel sandwiched between two photonic crystal slabs with alternating high to low dielectric constants and a multi-cell cavity-resonator designed with fishnet-metamaterial apertures. The structural designs of our interest are intended to only allow an operating-mode or -band within a narrow frequency range to propagate. The simulation analysis shows that trapped non-PBG modes are effectively suppressed down to ~ -14.3 dB/cm, while PBG modes propagated with ~2 dB of insertion loss, corresponding to ~1.14 dB/cm attenuation. The pre- liminary modeling analysis on the fishnet-embedded cavity shows noticeable improvement of Q-factor and field gradient of the operating mode (TM010) compared to those of typical pillbox- or PBG-cavities. Fabrication of the Ka-band PBG-waveguide and S-band fishnet cavity structures is currently underway and they will be tested with a microwave test bench/8510C Network Analyzer and 5.5 MW S-band klystron. These structures can be applied to stable short-bunch formation and mono chromatic radiation in high frequency accelerators.
Low-loss photonic integrated circuits (PIC) and microresonators have enabled novel applications ranging from narrow-linewidth lasers, microwave photonics, to chip-scale optical frequency combs and quantum frequency conversion. To translate these results into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in fabrication of integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators can be attained at die-level throughput. For emerging nonlinear applications such as integrated travelling-wave parametric amplifiers and mode-locked lasers, PICs of length scales of up to a meter are required, placing stringent demands on yield and performance that have not been met with current fabrication techniques. Here we overcome these challenges and demonstrate a fabrication technology which meets all these requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 million, corresponding to a linear propagation loss of 1.0 dB/m, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances and cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB/m loss in dies of only 5x5 mm size. Using a modulation response measurement self-calibrated via the Kerr nonlinearity, we reveal that, strikingly, the intrinsic absorption-limited Q factor of our Si3N4 microresonators exceeds a billion. Transferring the present Si3N4 photonics technology to standard commercial foundries, and merging it with silicon photonics using heterogeneous integration technology, will significantly expand the scope of todays integrated photonics and seed new applications.
A multitude of large-scale silicon photonic systems based on ring resonators have been envisioned for applications ranging from biomedical sensing to quantum computing and machine learning. Yet, due to the lack of a scalable solution for controlling ring resonators, practical demonstrations have been limited to systems with only a few rings. Here, we demonstrate that large systems can be controlled only by using doped waveguide elements inside their rings whilst preserving their area and cost. We measure the large photoconductive changes of the waveguides for monitoring rings resonance conditions across high-dynamic ranges and leverage their thermo-optic effects for tuning. This allows us to control ring resonators without requiring additional components, complex tuning algorithms, or additional electrical I/Os. We demonstrate automatic resonance alignment of 31 rings of a 16x16 switch and of a 14-ring coupled resonator optical waveguide (CROW), making them the largest, yet most compact, automatically controlled silicon ring resonator circuits to date.
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