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Register a new userTunable Photonic Radiofrequency Filter with An Ultra-high Out-Of-Band Rejection
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As radiofrequency filtering plays a vital role in electromagnetic devices and systems, recently photonic techniques have been intensively studied to implement radiofrequency filters to harness wide frequency coverage, large instantaneous bandwidth, low frequency-dependent loss, flexible tunability and strong immunity to electromagnetic interference. However, one crucial challenge facing the photonic radiofrequency filter (PRF) is the less impressive out-of-band rejection. Here, to the best of our knowledge, we demonstrate a tunable PRF with a record out-of-band rejection of 80 dB, which is 3 dB higher than the maximum value (~77 dB) reported so far, when incorporating highly selective polarization control and large narrow-band amplification enabled by stimulated Brillouin scattering effect. In particular, this record rejection is arduous to be achieved for a narrow passband (e.g., a few megahertz) and a high finesse in a PRF. Moreover, the proposed PRF is an active one capable of providing negligible insertion loss and even signal gain. Tunable central frequency ranging from 2.1 to 6.1 GHz is also demonstrated. The proposed PRF will provide an ultra-high noise or clutter suppression for harsh electromagnetic scenarios, particularly when room-temperature implementation and remote distribution are needed.
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The ever-increasing demand for high speed and large bandwidth has made photonic systems a leading candidate for the next generation of telecommunication and radar technologies. The photonic platform enables high performance while maintaining a small footprint and provides a natural interface with fiber optics for signal transmission. However, producing sharp, narrow-band filters that are competitive with RF components has remained challenging. In this paper, we demonstrate all-silicon RF-photonic multi-pole filters with $sim100times$ higher spectral resolution than previously possible in silicon photonics. This enhanced performance is achieved utilizing engineered Brillouin interactions to access long-lived phonons, greatly extending the available coherence times in silicon. This Brillouin-based optomechanical system enables ultra-narrow (3.5 MHz) multi-pole response that can be tuned over a wide ($sim10$ GHz) spectral band. We accomplish this in an all-silicon optomechanical waveguide system, using CMOS compatible fabrication techniques. In addition to bringing greatly enhanced performance to silicon photonics, we demonstrate reliability and robustness, necessary to transition silicon-based optomechanical technologies from the scientific bench-top to high-impact field-deployable technologies.
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For the abstract, please see the submitted article.
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