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Register a new userOrbital-driven Rashba effect in a binary honeycomb monolayer AgTe
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The Rashba effect is fundamental to the physics of two-dimensional electron systems and underlies a variety of spintronic phenomena. It has been proposed that the formation of Rashba-type spin splittings originates microscopically from the existence of orbital angular momentum (OAM) in the Bloch wave functions. Here, we present detailed experimental evidence for this OAM-based origin of the Rashba effect by angle-resolved photoemission (ARPES) and two-photon photoemission (2PPE) experiments for a monolayer AgTe on Ag(111). Using quantitative low-energy electron diffraction (LEED) analysis we determine the structural parameters and the stacking of the honeycomb overlayer with picometer precision. Based on an orbital-symmetry analysis in ARPES and supported by first-principles calculations, we unequivocally relate the presence and absence of Rashba-type spin splittings in different bands of AgTe to the existence of OAM.
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The intriguing properties, especially Dirac physics in graphene, have inspired the pursuit of two-dimensional materials in honeycomb structure. Here we achieved a monolayer transition metal monochalcogenide AgTe on Ag(111) by tellurization of the substrate. High-resolution scanning tunneling microscopy, combined with low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density functional theory calculations, demonstrates the planar honeycomb structure of AgTe. The first principle calculations further reveal that, protected by the in-plane mirror reflection symmetry, two Dirac node-line Fermions exist in the electronic structures of free-standing AgTe when spin-orbit coupling (SOC) is ignored. While in fact the SOC leads to the gap opening, and resulting in the emergence of the topologically nontrivial quantum spin Hall edge state. Importantly, our experiments evidence the chemical stability of the monolayer AgTe in ambient conditions. It is possible to study AgTe by more ex-situ measurements and even to apply it in novel electronic devices.
We propose that the hybridization between two sets of Rashba bands can lead to an unconventional topology where the two Fermi circles from different bands own in-plane helical spin textures with the same chiralities, and possess group velocities with the same directions. Under the weak spin injection, the two Fermi circles both give the positive contributions to the spin-to-charge conversion and thus induce the giant inverse Rashba-Edelstein Effect with large conversion efficiency, which is very different from the conventional Rashba-Edelstein Effect. More importantly, through the first-principles calculations, we predict that monolayer OsBi2 could be a good candidate to realize the giant inverse Rashba-Edelstein Effect. Our studies not only demonstrate a new mechanism to achieve highly efficient spin-to-charge conversion in spintronics, but also provide a promising material to realize it.
Based on first-principles calculations, we predict that the monolayer AuTe2Cl is a quantum spin Hall (QSH) insulator with a topological band gap about 10 meV. The three-dimensional (3D) AuTe2Cl is a topological semimetal that can be viewed as the monolayer stacking along b axis. By studying the energy level distribution of p orbitals of Te atoms for the bulk and the monolayer, we find that the confinement effect driven p_y^- and p_z^+ band inversion is responsible for the topological nontrivial nature of monolayer. Since 3D bulk AuTe2Cl has already been experimentally synthesized, we expect that monolayer AuTe2Cl can be exfoliated from a bulk sample and the predicted QSH effect can be observed.
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material.
Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.
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