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Register a new userFlat AgTe Honeycomb Monolayer with Topologically Nontrivial States
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The intriguing properties, especially Dirac physics in graphene, have inspired the pursuit of two-dimensional materials in honeycomb structure. Here we achieved a monolayer transition metal monochalcogenide AgTe on Ag(111) by tellurization of the substrate. High-resolution scanning tunneling microscopy, combined with low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density functional theory calculations, demonstrates the planar honeycomb structure of AgTe. The first principle calculations further reveal that, protected by the in-plane mirror reflection symmetry, two Dirac node-line Fermions exist in the electronic structures of free-standing AgTe when spin-orbit coupling (SOC) is ignored. While in fact the SOC leads to the gap opening, and resulting in the emergence of the topologically nontrivial quantum spin Hall edge state. Importantly, our experiments evidence the chemical stability of the monolayer AgTe in ambient conditions. It is possible to study AgTe by more ex-situ measurements and even to apply it in novel electronic devices.
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The Rashba effect is fundamental to the physics of two-dimensional electron systems and underlies a variety of spintronic phenomena. It has been proposed that the formation of Rashba-type spin splittings originates microscopically from the existence of orbital angular momentum (OAM) in the Bloch wave functions. Here, we present detailed experimental evidence for this OAM-based origin of the Rashba effect by angle-resolved photoemission (ARPES) and two-photon photoemission (2PPE) experiments for a monolayer AgTe on Ag(111). Using quantitative low-energy electron diffraction (LEED) analysis we determine the structural parameters and the stacking of the honeycomb overlayer with picometer precision. Based on an orbital-symmetry analysis in ARPES and supported by first-principles calculations, we unequivocally relate the presence and absence of Rashba-type spin splittings in different bands of AgTe to the existence of OAM.
By means of the first-principles calculations and magnetic topological quantum chemistry, we demonstrate that the low energy physics in the checkerboard antiferromagnetic (AFM) monolayer FeSe, very close to an AFM topological insulator that hosts robust edge states, can be well captured by a double-degenerate fragile topologically flat band just below the Fermi level. The Wilson loop calculations identify that such fragile topology is protected by the $S_{4z}$ symmetry, which gives rise to an AFM higher-order topological insulator that support the bound state with fractional charge $e/2$ at the sample corner. This is the first reported $S_{4z}$-protected fragile topological material, which provides a new platform to study the intriguing properties of magnetic fragile topological electronic states. Previous observations of the edge states and bound states in checkerboard AFM monolayer FeSe can also be well understood in our work.
Stanene has been predicted to be a two-dimensional topological insulator (2DTI). Its low-buckled atomic geometry and the enhanced spin-orbit coupling are expected to cause a prominent quantum spin hall (QSH) effect. However, most of the experimentally grown stanene to date displays a metallic state without a real gap, possibly due to the chemical coupling with the substrate and the stress applied by the substrate. Here,we demonstrate an efficient way of tuning the atomic buckling in stanene to open a topologically nontrivial energy gap. Via tuning the growth kinetics, we obtain not only the low-buckled 1x1 stanene but also an unexpected high-buckled R3xR3 stanene on the Bi(111) substrate. Scanning tunneling microscopy (STM) study combined with density functional theory (DFT) calculation confirms that the R3xR3 stanene is a distorted 1x1 structure with a high-buckled Sn in every three 1x1 unit cells. The high-buckled R3xR3 stanene favors a large band inversion at the {Gamma} point, and the spin orbital coupling open a topologically nontrivial energy gap. The existence of edge states as verified in both STM measurement and DFT calculation further confirms the topology of the R3xR3 stanene. This study provides an alternate way to tune the topology of monolayer 2DTI materials.
We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the pi-pi* band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.
Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the bulk valence band and the bulk conduction band of Bi can be connected by the surface states. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided a direct experimental signature that Bi(111) thin films of a certain thickness on the Bi$_2$Te$_3$(111) substrate can be topologically nontrivial in three dimension.
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