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Register a new userUltrafast optical currents in gapped graphene
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Added by
Seyyedeh Azar Oliaei Motlagh
Publication date
2019
fields
Physics
and research's language is
English
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We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about the $x$-axis. Thus, the rectified current in gapped graphene has inter-band origin, while the intra-band contribution to the rectified current is zero.
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We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical-cycle pulses: a chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the system, while the second pulse generates a femtosecond pulse of the anomalous Hall current. The proposed effect is the fundamentally the fastest all-optical anomalous Hall effect possible in nature. It can be applied to ultrafast all-optical storage and processing of information, both classical and quantum.
In the model of gapped graphene, we have shown how the recently predicted topological resonances are solely related to the presence of an energy band gap at the $K$ and $K^prime$ points of the Brillouin zone. In the field of a strong single-oscillation chiral (circularly-polarized) optical pulse, the topological resonance causes the valley-selective population of the conduction band. This population distribution represents a chiral texture in the reciprocal space that is structured with respect to the pulse separatrix as has earlier been predicted for transition metal dichalcogenides. As the band gap is switched off, this chirality gradually disappears replaced by an achiral distribution characteristic of graphene.
We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the ultrafast optical absorption for low field amplitudes is independent of the polarization, linear or circular, of the applied optical pulse, for high field amplitudes, the absorption strongly depends on the pulse polarization. For a linearly polarized pulse, the optical absorbance is saturated at the value of $approx 1.4$ percent for the pulses amplitude of $geq 0.4~mathrm{V/AA}$, but no such saturation is observed for a circularly polarized pulse. For the gapped graphene, the absorption of a linearly polarized pulse has a weak dependence on the bandgap, while for a circularly polarized pulse, the absorption is very sensitive to the bandgap. %Opening a bandgap in graphene by placing in on, for example, SiC substrate strongly modify the ultrafast absorption at small field amplitudes.
The second-order nonlinear optical susceptibility $Pi^{(2)}$ for second harmonic generation is calculated for gapped graphene. The linear and second-order nonlinear plasmon excitations are investigated in context of second harmonic generation (SHG). We report a red shift and an order of magnitude enhancement of the SHG resonance with growing gap, or alternatively, reduced electro-chemical potential.
A new type of self-similar potential is used to study a multibarrier system made of graphene. Such potential is based on the traditional middle third Cantor set rule combined with a scaling of the barriers height. The resulting transmission coefficient for charge carriers, obtained using the quantum relativistic Dirac equation, shows a surprising self-similar structure. The same potential does not lead to a self-similar transmission when applied to the typical semiconductors described by the non-relativistic Schrodinger equation. The proposed system is one of the few examples in which a self-similar structure produces the same pattern in a physical property. The resulting scaling properties are investigated as a function of three parameters: the height of the main barrier, the total length of the system and the generation number of the potential. These scaling properties are first identified individually and then combined to find general analytic scaling expressions.
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