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Register a new userUltrafast topological phenomena in gapped graphene
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In the model of gapped graphene, we have shown how the recently predicted topological resonances are solely related to the presence of an energy band gap at the $K$ and $K^prime$ points of the Brillouin zone. In the field of a strong single-oscillation chiral (circularly-polarized) optical pulse, the topological resonance causes the valley-selective population of the conduction band. This population distribution represents a chiral texture in the reciprocal space that is structured with respect to the pulse separatrix as has earlier been predicted for transition metal dichalcogenides. As the band gap is switched off, this chirality gradually disappears replaced by an achiral distribution characteristic of graphene.
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We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about the $x$-axis. Thus, the rectified current in gapped graphene has inter-band origin, while the intra-band contribution to the rectified current is zero.
We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the ultrafast optical absorption for low field amplitudes is independent of the polarization, linear or circular, of the applied optical pulse, for high field amplitudes, the absorption strongly depends on the pulse polarization. For a linearly polarized pulse, the optical absorbance is saturated at the value of $approx 1.4$ percent for the pulses amplitude of $geq 0.4~mathrm{V/AA}$, but no such saturation is observed for a circularly polarized pulse. For the gapped graphene, the absorption of a linearly polarized pulse has a weak dependence on the bandgap, while for a circularly polarized pulse, the absorption is very sensitive to the bandgap. %Opening a bandgap in graphene by placing in on, for example, SiC substrate strongly modify the ultrafast absorption at small field amplitudes.
We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical-cycle pulses: a chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the system, while the second pulse generates a femtosecond pulse of the anomalous Hall current. The proposed effect is the fundamentally the fastest all-optical anomalous Hall effect possible in nature. It can be applied to ultrafast all-optical storage and processing of information, both classical and quantum.
Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion.
Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectroscopy with ~20 nm spatial resolution, far below the diffraction limit, which is accomplished using a scattering scanning near-field optical microscope (s-SNOM). This technique allows us to investigate exfoliated graphene single-layers on SiO2 at technologically significant mid-infrared (MIR) frequencies where the local optical conductivity becomes experimentally accessible through the excitation of surface plasmons via the s-SNOM tip. Optical pumping at near-infrared (NIR) frequencies prompts distinct changes in the plasmonic behavior on 200 femtosecond (fs) time scales. The origin of the pump-induced, enhanced plasmonic response is identified as an increase in the effective electron temperature up to several thousand Kelvin, as deduced directly from the Drude weight associated with the plasmonic resonances.
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