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Ultrafast strong-field absorption in gapped graphene

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 Publication date 2020
  fields Physics
and research's language is English




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We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the ultrafast optical absorption for low field amplitudes is independent of the polarization, linear or circular, of the applied optical pulse, for high field amplitudes, the absorption strongly depends on the pulse polarization. For a linearly polarized pulse, the optical absorbance is saturated at the value of $approx 1.4$ percent for the pulses amplitude of $geq 0.4~mathrm{V/AA}$, but no such saturation is observed for a circularly polarized pulse. For the gapped graphene, the absorption of a linearly polarized pulse has a weak dependence on the bandgap, while for a circularly polarized pulse, the absorption is very sensitive to the bandgap. %Opening a bandgap in graphene by placing in on, for example, SiC substrate strongly modify the ultrafast absorption at small field amplitudes.



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We study theoretically the interaction of ultrashort optical pulses with gapped graphene. Such strong pulse results in finite conduction band population and corresponding electric current both during and after the pulse. Since gapped graphene has broken inversion symmetry, it has an axial symmetry about the $y$-axis but not about the $x$-axis. We show that, in this case, if the linear pulse is polarized along the $x$-axis, the rectified electric current is generated in the $y$ direction. At the same time, the conduction band population distribution in the reciprocal space is symmetric about the $x$-axis. Thus, the rectified current in gapped graphene has inter-band origin, while the intra-band contribution to the rectified current is zero.
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