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Register a new userSi-rich silicon-nitride waveguides for optical transmissions and towards wavelength conversion around 2 $mu$m
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Authors
Manon Lamy
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We show that subwavelength silicon-rich nitride waveguides efficiently sustain high-speed transmissions at 2 $mu$m. We report the transmission of a 10 Gbit/s signal over 3.5 cm with negligible power penalty. Parametric conversion in the pulsed pump regime is also demonstrated using the same waveguide structure with an efficiency as high as -18 dB.
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A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {mu}m.
Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on silicon nitride (SiN) platforms. In this paper, we report monolithic integration of magneto-optical (MO) isolators on SiN platforms with record high performances based on standard silicon photonics foundry process and magneto-optical thin film deposition. We successfully grow high quality MO garnet thin films on SiN with large Faraday rotation up to -5900 deg/cm. We show a superior magneto-optical figure of merit (FoM) of MO/SiN waveguides compared to that of MO/SOI in an optimized device design. We demonstrate TM/TE mode broadband and narrow band optical isolators and circulators on SiN with high isolation ratio, low cross talk and low insertion loss. In particular, we observe 1 dB insertion loss and 28 dB isolation ratio in a SiN racetrack resonator-based isolator at 1570.2 nm wavelength. The low thermo-optic coefficient of SiN also ensures excellent temperature stability of the device. Our work paves the way for integration of high performance nonreciprocal photonic devices on SiN platforms.
A novel technique is presented for realising programmable silicon photonic circuits. Once the proposed photonic circuit is programmed, its routing is retained without the need for additional power consumption. This technology enables a uniform multi-purpose design of photonic chips for a range of different applications and performance requirements, as it can be programmed for each specific application after chip fabrication. Therefore the cost per chip can be dramatically reduced because of the increase in production volume, and rapid prototyping of new photonic circuits is enabled. Essential building blocks for programmable circuits, erasable directional couplers (DCs) were designed and fabricated, utilising ion implanted waveguides. We demonstrate permanent switching between the drop port and through port of the DCs using a localised post-fabrication laser annealing process. Proof-of-principle demonstrators in the form of generic 1X4 and 2X2 programmable switching circuits were then fabricated and subsequently programmed, to define their function.
We demonstrate a silicon nitride trench waveguide deposited with bowtie antennas for plasmonic enhanced optical trapping. The sub-micron silicon nitride trench waveguides were fabricated with conventional optical lithography in a low cost manner. The waveguides embrace not only low propagation loss and high nonlinearity, but also the inborn merits of combining micro-fluidic channel and waveguide together. Analyte contained in the trapezoidal trench channel can interact with the evanescent field from the waveguide beneath. The evanescent field can be further enhanced by plasmonic nanostructures. With the help of gold nano bowtie antennas, the studied waveguide shows outstanding trapping capability on 10 nm polystyrene nanoparticles. We show that the bowtie antennas can lead to 60-fold enhancement of electric field in the antenna gap. The optical trapping force on a nanoparticle is boosted by three orders of magnitude. A strong tendency shows the nanoparticle is likely to move to the high field strength region, exhibiting the trapping capability of the antenna. Gradient force in vertical direction is calculation by using a point-like dipole assumption, and the analytical solution matches the full-wave simulation well. The investigation indicates that nanostructure patterned silicon nitride trench waveguide is suitable for optical trapping and nanoparticle sensing applications.
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {mu}m or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 {mu}m by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of ~2 {mu}m or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (~40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2{mu}m.
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