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Register a new userWaveguide integrated high performance magneto-optical isolators and circulators on silicon nitride platforms
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Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on silicon nitride (SiN) platforms. In this paper, we report monolithic integration of magneto-optical (MO) isolators on SiN platforms with record high performances based on standard silicon photonics foundry process and magneto-optical thin film deposition. We successfully grow high quality MO garnet thin films on SiN with large Faraday rotation up to -5900 deg/cm. We show a superior magneto-optical figure of merit (FoM) of MO/SiN waveguides compared to that of MO/SOI in an optimized device design. We demonstrate TM/TE mode broadband and narrow band optical isolators and circulators on SiN with high isolation ratio, low cross talk and low insertion loss. In particular, we observe 1 dB insertion loss and 28 dB isolation ratio in a SiN racetrack resonator-based isolator at 1570.2 nm wavelength. The low thermo-optic coefficient of SiN also ensures excellent temperature stability of the device. Our work paves the way for integration of high performance nonreciprocal photonic devices on SiN platforms.
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We propose and investigate the performance of integrated photonic isolators based on non-reciprocal mode conversion facilitated by unidirectional, traveling acoustic waves. A triply-guided waveguide system on-chip, comprising two optical modes and an electrically-driven acoustic mode, facilitates the non-reciprocal mode conversion and is combined with modal filters to create the isolator. The co-guided and co-traveling arrangement enables isolation with no additional optical loss, without magnetic-optic materials, and low power consumption. The approach is theoretically evaluated and simulations predict over 20 dB of isolation and 2.6 dB of insertion loss with 370 GHz optical bandwidth and a 1 cm device length. The isolator utilizes only 1 mW of electrical drive power, an improvement of 1-3 orders of magnitude over the state-of-the-art. The electronic driving and lack of magneto-optic materials suggest the potential for straightforward integration with the drive circuitry, possibly in monolithic CMOS technology, enabling a fully contained `black box optical isolator with two optical ports and DC electrical power.
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.
Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {mu}m.
Cavity-free optical nonreciprocity components, which have an inherent strong asymmetric interaction between the forward- and backward-propagation direction of the probe field, are key to produce such as optical isolators and circulators. According to the proposal presented by Xia et al., [Phys. Rev. Lett. 121, 203602 (2018)], we experimentally build a device that uses cross-Kerr nonlinearity to achieve a cavity-free optical isolator and circulator. Its nonreciprocal behavior arises from the thermal motion of N-type configuration atoms, which induces a strong chiral cross-Kerr nonlinear response for the weak probe beam. We obtain a two-port optical isolator for up to 20 dB of isolation ratio in a specially designed Sagnac interferometer. The distinct propagation directions of the weak probe field determine its cross-phase shift and transmission, by which we demonstrate the accessibility of a four-port optical circulator.
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