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Register a new userCoherent modulation of the electron temperature and electron-phonon couplings in a 2D material
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Ultrashort light pulses can selectively excite charges, spins and phonons in materials, providing a powerful approach for manipulating their properties. Here we use femtosecond laser pulses to coherently manipulate the electron and phonon distributions, and their couplings, in the charge density wave (CDW) material 1T-TaSe$_2$. After exciting the material with a short light pulse, spatial smearing of the electrons launches a coherent lattice breathing mode, which in turn modulates the electron temperature. This indicates a bi-directional energy exchange between the electrons and the strongly-coupled phonons. By tuning the laser excitation fluence, we can control the magnitude of the electron temperature modulation, from ~ 200 K in the case of weak excitation, to ~ 1000 K for strong laser excitation. This is accompanied by a switching of the dominant mechanism from anharmonic phonon-phonon coupling to coherent electron-phonon coupling, as manifested by a phase change of $pi$ in the electron temperature modulation. Our approach thus opens up possibilities for coherently manipulating the interactions and properties of quasi-2D and other quantum materials using light.
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The interplay of electron-phonon (el-ph) and electron-electron (el-el) interactions in epitaxial graphene is studied by directly probing its electronic structure. We found a strong coupling of electrons to the soft part of the A1g phonon evident by a kink at 150+/-15 meV, while the coupling of electrons to another expected phonon E2g at 195 meV can only be barely detected. The possible role of the el-el interaction to account for the enhanced coupling of electrons to the A1g phonon, and the contribution of el-ph interaction to the linear imaginary part of the self energy at high binding energy are also discussed. Our results reveal the dominant role of the A1g phonon in the el-ph interaction in graphene, and highlight the important interplay of el-el and el-ph interactions in the self energy of graphene.
We present a comparative, theoretical study of the doping dependence of the critical temperature $T_C$ of the ferromagnetic insulator-metal transition in Gd-doped and O-deficient EuO, respectively. The strong $T_C$ enhancement in Eu$_{1-x}$Gd$_x$O is due to Kondo-like spin fluctuations on the Gd sites, which are absent in EuO$_{1-x}$. Moreover, we find that the $T_C$ saturation in Eu$_{1-x}$Gd$_x$O for large $x$ is due to a reduced activation of dopant electrons into the conduction band, in agreement with experiments, rather than antiferromagnetic long-range contributions of the RKKY interaction. The results shed light on possibilities for further increasing $T_C$.
We use first-principles methods to study doped strong ferroelectrics (taking BaTiO$_3$ as a prototype). Here we find a strong coupling between itinerant electrons and soft polar phonons in doped BaTiO$_3$, contrary to Anderson/Blounts weakly coupled electron mechanism for ferroelectric-like metals. As a consequence, across a polar-to-centrosymmetric phase transition in doped BaTiO$_3$, the total electron-phonon coupling is increased to about 0.6 around the critical concentration, which is sufficient to induce phonon-mediated superconductivity of about 2 K. Lowering the crystal symmetry of doped BaTiO$_3$ by imposing epitaxial strain can further increase the superconducting temperature via a sizable coupling between itinerant electrons and acoustic phonons. Our work demonstrates a viable approach to modulating electron-phonon coupling and inducing phonon-mediated superconductivity in doped strong ferroelectrics and potentially in polar metals. Our results also show that the weakly coupled electron mechanism for ferroelectric-like metals is not necessarily present in doped strong ferroelectrics.
We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.
Density functional theory is generalized to incorporate electron-phonon coupling. A Kohn-Sham equation yielding the electronic density $n_U(mathbf{r})$, a conditional probability density depending parametrically on the phonon normal mode amplitudes $U={U_{mathbf{q}lambda}}$, is coupled to the nuclear Schrodinger equation of the exact factorization method. The phonon modes are defined from the harmonic expansion of the nuclear Schrodinger equation. A nonzero Berry curvature on nuclear configuration space affects the phonon modes, showing that the potential energy surface alone is generally not sufficient to define the phonons. An orbital-dependent functional approximation for the non-adiabatic exchange-correlation energy reproduces the leading-order nonadiabatic electron-phonon-induced band structure renormalization in the Frohlich model.
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