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Register a new userGraphene photodetector integrated on a photonic crystal defect waveguide
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We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic crystal defect waveguide allows for optimal photo-thermoelectric conversion of the occurring temperature profile in graphene into a photovoltage due to additional silicon slabs on both sides of the waveguide, enhancing the device response as compared to a conventional slot waveguide design. A photoresponsivity of 4.7 V/W and a (setup-limited) electrical bandwidth of 18 GHz are achieved. Under a moderate bias of 0.4 V we obtain a photoconductive responsivity of 0.17 A/W.
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We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.
Observations of thermally driven transverse vibration of a photonic crystal waveguide (PCW) are reported. The PCW consists of two parallel nanobeams with a 240 nm vacuum gap between the beams. Models are developed and validated for the transduction of beam motion to phase and amplitude modulation of a weak optical probe propagating in a guided mode (GM) of the PCW for probe frequencies far from and near to the dielectric band edge. Since our PCW has been designed for near-field atom trapping, this research provides a foundation for evaluating possible deleterious effects of thermal motion on optical atomic traps near the surfaces of PCWs. Longer term goals are to achieve strong atom-mediated links between individual phonons of vibration and single photons propagating in the GMs of the PCW, thereby enabling opto-mechanics at the quantum level with atoms, photons, and phonons. The experiments and models reported here provide a basis for assessing such goals, including sensing mechanical motion at the Standard Quantum Limit (SQL).
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual-gate to create a pn-junction in the optical absorption region of the device. While at zero bias the photo-thermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB-bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.
Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence mapping of the out-of-plane scattered signal along the photonic crystal waveguide. The quantum dot exciton is tuned towards the cavity mode by temperature control. A vacuum Rabi splitting of ~ 140 mueV is observed at resonance.
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