No Arabic abstract
Bulk boundary correspondence in topological materials allows to study their bulk topology through the investigation of their topological boundary modes. However, for classes that share similar boundary phenomenology, the growing diversity of topological phases may lead to ambiguity in the topological classification of materials. Such is the current status of bulk bismuth. While some theoretical models indicate that bismuth possesses a trivial topological nature, other theoretical and experimental studies suggest non-trivial topological classifications such as a strong or a higher order topological insulator, both of which hosts helical modes on their boundaries. Here we use a novel approach to resolve the topological classification of bismuth by spectroscopically mapping the response of its boundary modes to a topological defect in the form of a screw dislocation (SD). We find that the edge mode extends over a wide energy range, and withstands crystallographic irregularities, without showing any signs of backscattering. It seems to bind to the bulk SD, as expected for a topological insulator (TI) with non-vanishing weak indices. We argue that the small scale of the bulk energy gap, at the time reversal symmetric momentum $L$, positions bismuth within the critical region of a topological phase transition to a strong TI with non-vanishing weak indices. We show that the observed boundary modes are approximately helical already on the $mathbb{Z}_2$ trivial side of the topological phase transition. This work opens the door for further possibilities to examine the response of topological phases to crystallographic topological defects, and to uniquely explore their associated bulk boundary phenomena.
We classify topological defects in non-Hermitian systems with point gap, real gap and imaginary gap for all the Bernard-LeClair classes or generalized Bernard-LeClair classes in all dimensions. The defect Hamiltonian $H(bf{k}, {bf r})$ is described by a non-Hermitian Hamiltonian with spatially modulated adiabatical parameter ${bf r}$ surrounding the defect. While the non-Hermitian system with point gap belongs to any of 38 symmetry classes (Bernard-LeClair classes), for non-Hermitian systems with line-like gap we get 54 non-equivalent generalized Bernard-LeClair classes as a natural generalization of point gap classes. Although the classification of defects in Hermitian systems has been explored in the context of standard ten-fold Altland-Zirnbauer symmetry classes, a complete understanding of the role of the general non-Hermitian symmetries on the topological defects and their associated classification are still lacking. By continuous transformation and homeomorphic mapping, these non-Hermitian defect systems can be mapped to topologically equivalent Hermitian systems with associated symmetries, and we get the topological classification by classifying the corresponding Hermitian Hamiltonians. We discuss some non-trivial classes with point gap according to our classification table, and give explicitly the topological invariants for these classes. We also study some lattice or continuous models and discuss the correspondence between the topological number and zero modes at the topological defect.
Nonzero weak topological indices are thought to be a necessary condition to bind a single helical mode to lattice dislocations. In this work we show that higher-order topological insulators (HOTIs) can, in fact, host a single helical mode along screw or edge dislocations (including step edges) in the absence of weak topological indices. When this occurs, the helical mode is necessarily bound to a dislocation characterized by a fractional Burgers vector, macroscopically detected by the existence of a stacking fault. The robustness of a helical mode on a partial defect is demonstrated by an adiabatic transformation that restores translation symmetry in the stacking fault. We present two examples of HOTIs, one intrinsic and one extrinsic, that show helical modes at partial dislocations. Since partial defects and stacking faults are commonplace in bulk crystals, the existence of such helical modes can measurably affect the expected conductivity in these materials.
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.
Tailoring electron transfer dynamics across solid-liquid interfaces is fundamental to the interconversion of electrical and chemical energy. Stacking atomically thin layers with a very small azimuthal misorientation to produce moire superlattices enables the controlled engineering of electronic band structures and the formation of extremely flat electronic bands. Here, we report a strong twist angle dependence of heterogeneous charge transfer kinetics at twisted bilayer graphene electrodes with the greatest enhancement observed near the magic angle (~1.1 degrees). This effect is driven by the angle-dependent tuning of moire-derived flat bands that modulate electron transfer processes with the solution-phase redox couple. Combined experimental and computational analysis reveals that the variation in electrochemical activity with moire angle is controlled by atomic reconstruction of the moire superlattice at twist angles <2 degrees, and topological defect AA stacking regions produce a large anomalous local electrochemical enhancement that cannot be accounted for by the elevated local density of states alone. Our results introduce moire flat band materials as a distinctively tunable paradigm for mediating electrochemical transformations.
The vibrational modes of some single wall carbon nanotube (SWNT) intramolecular junctions (IMJs) have been calculated using the newest Brenner reactive empirical bond order (REBO) potential, based upon which their nonresonant Raman spectra have been further calculated using the empirical bond polarizability model. It is found that the Raman peaks induced by pentagon defects lie out of the $G$-band of the SWNTs, so the high-frequency part of the Raman spectra of the SWNT IMJs can be used to determine experimentally their detailed geometrical structures. Also, the intensity of the Raman spectra has a close relation with the number of pentagon defects in the SWNT IMJs. Following the Descartes-Euler Polyhedral Formula (DEPF), the number of heptagon defects in the SWNT IMJs can also be determined. The first-principle calculations are also performed, verifying the results obtained by the REBO potential. The $G$ band width of the SWNT IMJ can reflect the length of its transition region between the pentagon and heptagon rings.