No Arabic abstract
The vibrational modes of some single wall carbon nanotube (SWNT) intramolecular junctions (IMJs) have been calculated using the newest Brenner reactive empirical bond order (REBO) potential, based upon which their nonresonant Raman spectra have been further calculated using the empirical bond polarizability model. It is found that the Raman peaks induced by pentagon defects lie out of the $G$-band of the SWNTs, so the high-frequency part of the Raman spectra of the SWNT IMJs can be used to determine experimentally their detailed geometrical structures. Also, the intensity of the Raman spectra has a close relation with the number of pentagon defects in the SWNT IMJs. Following the Descartes-Euler Polyhedral Formula (DEPF), the number of heptagon defects in the SWNT IMJs can also be determined. The first-principle calculations are also performed, verifying the results obtained by the REBO potential. The $G$ band width of the SWNT IMJ can reflect the length of its transition region between the pentagon and heptagon rings.
Recently, it was suggested that the polarization dependence of light absorption to a single-walled carbon nanotube is altered by carrier doping. We specify theoretically the doping level at which the polarization anisotropy is reversed by plasmon excitation. The plasmon energy is mainly determined by the diameter of a nanotube, because pseudospin makes the energy independent of the details of the band structure. We find that the effect of doping on the Coulomb interaction appears through the screened exchange energy, which can be observed as changes in the absorption peak positions. Our results strongly suggest the possibility that oriented nanotubes function as a polarization switch.
Bulk boundary correspondence in topological materials allows to study their bulk topology through the investigation of their topological boundary modes. However, for classes that share similar boundary phenomenology, the growing diversity of topological phases may lead to ambiguity in the topological classification of materials. Such is the current status of bulk bismuth. While some theoretical models indicate that bismuth possesses a trivial topological nature, other theoretical and experimental studies suggest non-trivial topological classifications such as a strong or a higher order topological insulator, both of which hosts helical modes on their boundaries. Here we use a novel approach to resolve the topological classification of bismuth by spectroscopically mapping the response of its boundary modes to a topological defect in the form of a screw dislocation (SD). We find that the edge mode extends over a wide energy range, and withstands crystallographic irregularities, without showing any signs of backscattering. It seems to bind to the bulk SD, as expected for a topological insulator (TI) with non-vanishing weak indices. We argue that the small scale of the bulk energy gap, at the time reversal symmetric momentum $L$, positions bismuth within the critical region of a topological phase transition to a strong TI with non-vanishing weak indices. We show that the observed boundary modes are approximately helical already on the $mathbb{Z}_2$ trivial side of the topological phase transition. This work opens the door for further possibilities to examine the response of topological phases to crystallographic topological defects, and to uniquely explore their associated bulk boundary phenomena.
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.
With the empirical bond polarizability model, the nonresonant Raman spectra of the chiral and achiral single-wall carbon nanotubes (SWCNTs) under uniaxial and torsional strains have been systematically studied by textit{ab initio} method. It is found that both the frequencies and the intensities of the low-frequency Raman active modes almost do not change in the deformed nanotubes, while their high-frequency part shifts obviously. Especially, the high-frequency part shifts linearly with the uniaxial tensile strain, and two kinds of different shift slopes are found for any kind of SWCNTs. More interestingly, new Raman peaks are found in the nonresonant Raman spectra under torsional strain, which are explained by a) the symmetry breaking and b) the effect of bond rotation and the anisotropy of the polarizability induced by bond stretching.
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).