No Arabic abstract
In this work, magnetization dynamics is studied at low temperatures in a hybrid system that consists of thin epitaxial magnetic film coupled with superconducting planar microwave waveguide. The resonance spectrum was observed in a wide magnetic field range, including low fields below the saturation magnetization and both polarities. Analysis of the spectrum via a developed fitting routine allowed to derive all magnetic parameters of the film at cryogenic temperatures, to detect waveguide-induced uniaxial magnetic anisotropies of the first and the second order, and to uncover a minor misalignment of magnetic field. A substantial influence of the superconducting critical state on resonance spectrum is observed and discussed.
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes. However, CMOS characteristics for various width/length (W/L) ratios and under different bias conditions still require further research. In addition, no previous works have produced an integrated modeling process for cryo-CMOS technology. In this paper, the results of characterization of Semiconductor Manufacturing International Corporation (SMIC) 0.18 {mu}m CMOS technology at cryogenic temperatures (varying from 300 K to 4.2 K) are presented. Measurements of thin- and thick-oxide NMOS and PMOS devices with different W/L ratios are taken under four distinct bias conditions and at different temperatures. The temperature-dependent parameters are revised and an advanced CMOS model is proposed based on BSIM3v3 at the liquid nitrogen temperature (LNT). The proposed model ensures precision at the LNT and is valid for use in an industrial tape-out process. The proposed method presents a calibration approach for BSIM3v3 that is available at different temperature intervals.
This paper presents observation of mechanical effects of a graphene monolayer deposited on a quartz substrate designed to operate as an extremely low-loss acoustic cavity standard at liquid-helium temperature. Resonances of this state-of-the-art cavity are used to probe the mechanical loss of the graphene film, assessed to be about $80 : 10^{-4}$ at 4K. Significant frequency shifts of positive and negative sign have been observed for many overtones of three modes of vibration. These shifts cannot be predicted by the mass-loading model widely used in the Quartz Microbalance community. Although thermo-mechanical stresses are expected in such a graphene-on-quartz composite device at low temperature due to a mismatch of expansion coefficients of both materials, it cannot fully recover the mismatch of the mass loading effect. Based on a force-frequency theory applied to the three thickness modes, to reconcile the experimental results, the mean stresses in the graphene monolayer should be of the order of 140 GPa, likely close to its tensile strength.
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.
We introduce and experimentally characterize a general purpose device for signal processing in circuit quantum electrodynamics systems. The device is a broadband two-port microwave circuit element with three modes of operation: it can transmit, reflect, or invert incident signals between 4 and 8 GHz. This property makes it a versatile tool for lossless signal processing at cryogenic temperatures. In particular, rapid switching (less than or equal to 15 ns) between these operation modes enables several multiplexing readout protocols for superconducting qubits. We report the devices performance in a two-channel code domain multiplexing demonstration. The multiplexed data are recovered with fast readout times (up to 400 ns) and infidelities less than 0.01 for probe powers greater than 7 fW, in agreement with the expectation for binary signaling with Gaussian noise.
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin torque switching probability of state-of-the-art perpendicular magnetic tunnel junction nanopillars (40 to 60 nm in diameter) from room temperature down to 4 K, sampling up to a million switching events. The junction temperature at the switching voltage---obtained from the thermally assisted spin torque switching model---saturates at temperatures below about 75 K, showing that junction heating is significant below this temperature and that spin torque switching remains highly stochastic down to 4 K. A model of heat flow in a nanopillar junction shows this effect is associated with the reduced thermal conductivity and heat capacity of the metals in the junction.