Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMassless Dirac fermions in III-V semiconductor quantum wells
107
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Gamma$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
rate research
Read More
We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a way that the both quantum wells are expected to have gapless band structure typical for a Dirac fermions system. We have established that the first quantum well exhibits a massless Dirac fermions system with a quality slightly better then in conventional HgTe quantum wells of critical thickness. Second quantum well exhibits a high-quality two-dimensional topological insulator state with the energy gap of around 10 meV and well-defined edge transport making it as a good candidate for further study and applications of topological insulators.
We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the hamiltonians of binary materials strained to the alloy equilibrium lattice parameter. We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based opto-electronic devices without extensive supercell calculations.
The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.
We present a magneto-infrared spectroscopy study on a newly identified three-dimensional (3D) Dirac semimetal ZrTe$_5$. We observe clear transitions between Landau levels and their further splitting under magnetic field. Both the sequence of transitions and their field dependence follow quantitatively the relation expected for 3D emph{massless} Dirac fermions. The measurement also reveals an exceptionally low magnetic field needed to drive the compound into its quantum limit, demonstrating that ZrTe$_5$ is an extremely clean system and ideal platform for studying 3D Dirac fermions. The splitting of the Landau levels provides a direct and bulk spectroscopic evidence that a relatively weak magnetic field can produce a sizeable Zeeman effect on the 3D Dirac fermions, which lifts the spin degeneracy of Landau levels. Our analysis indicates that the compound evolves from a Dirac semimetal into a topological line-node semimetal under current magnetic field configuration.
The opening of a gap in single-layer graphene is often ascribed to the breaking of the equivalence between the two carbon sublattices. We show by angle-resolved photoemission spectroscopy that Ir- and Na-modified graphene grown on the Ir(111) surface presents a very large unconventional gap that can be described in terms of a phenomenological massless Dirac model. We discuss the consequences and differences of this model in comparison of the standard massive gap model, and we investigate the conditions under which such anomalous gap can arise from a spontaneous symmetry breaking.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
